
Allicdata Part #: | RJK6018DPM-00#T1-ND |
Manufacturer Part#: |
RJK6018DPM-00#T1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 600V 30A TO3PFM |
More Detail: | N-Channel 600V 30A (Ta) 60W (Tc) Through Hole TO-3... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-3PFM, SC-93-3 |
Supplier Device Package: | TO-3PFM |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4100pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 92nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 235 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The RJK6018DPM-00#T1 is a FET (field effect transistor) that is a single, p-channel logic level type. This device has many applications and is often used in power transistor circuits and some electrical devices, like solenoids, relays and motors. It also has multiple uses in digital logic circuits, such as expander circuits and level shifting applications. As with all FETs, understanding the working principle of the RJK6018DPM-00#T1 is important for those wanting to maximize its potential.
The principle of operation for this FET is built on two factors; field effect and gate current. Field effect is the phenomenon whereby an electrical field is induced when a voltage is applied to a semiconductor material. Gate current is the current that is used to control the flow of current through a transistor or FET. The combination of these two factors makes the RJK6018DPM-00#T1 a powerful device.
The field effect portion of the FET is responsible for “switching” the transistor on and off. When a positive voltage is applied to the gate terminal, it produces a positive potential difference between the source and drain terminals. This causes electrons to flow from one terminal to the other, which “switches” the FET on and allows current to flow. When the voltage at the gate terminal is reversed, the electrons stop flowing, “switching” the FET off and causing the current to stop.
The gate current is responsible for controlling the current through a transistor or FET. When a certain voltage is applied to the gate terminal, the corresponding current flows through the gate and is then used to switch the FET. A small voltage applied to the gate causes just a small current to enter the FET. Increasing the gate voltage increases the gate current, which in turn increases the current flowing through the FET, allowing larger amounts of electricity to flow.
When used in power transistor circuits, the RJK6018DPM-00#T1 can be used to switch on and off current flowing between two electrodes. This type of switching can be used to regulate the amount of current flowing through a circuit, as well as to control the flow of electricity in a device. When incorporated into a digital logic circuit, the FET can be used to control other components in the circuit, such as transistors, diodes, and capacitors.
As with any electronic device, the proper use and understanding of its operating principles is essential to maximizing its effectiveness. Understanding the working principle of the RJK6018DPM-00#T1 can help those working with the device to use it in the most effective way possible. There are many ways in which this FET can be used, from power transistor circuits to digital logic circuits. By understanding the functioning of the FET, individuals can maximize its potential effectiveness.
The specific data is subject to PDF, and the above content is for reference
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