RJK60S7DPP-E0#T2

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The RJK60S7DPP-E0#T2 is a single N-Channel enhancement mode POWER MOSFET device. This device features an advanced technology which provides superior RDS (on) with excellent switching performance, making it ideal for high frequency switching applications. It has a low on-state resistance of 4.1 mΩ, a typical gate threshold voltage of 1.2 V, and a typical output capacitance of 8 pF. This MOSFET also has a low operating temperature, typically up to -40°C.

The main application field for the RJK60S7DPP-E0#T2 is DC/DC and AC/DC converters. It is often applied as a high-frequency switch in computer peripherals, digital TVs, and audio equipment. In addition, this device is often used in low phase ripple switching and current-mode control DC/DC converters, such as in telecommunications systems, portable devices, and battery charging circuits.

The RJK60S7DPP-E0#T2 also has low electromagnetic noise, fast switching times, and short circuit protection, making it ideal for a variety of high-frequency switching applications. This device is often used to build power supplies, DC-DC converters, PFC, LED drivers, and other switching circuits.

The main working principle of the RJK60S7DPP-E0#T2 is based on the process of capacitive charging and discharging. This MOSFET is gate-controlled, and the gate is connected to the current source input terminal. When the gate is driven towards the source of the MOSFET, an electric field is created and charges the gate oxide layer. This electric field is strong enough to punch-thru the oxide layer and create channels in the n-channel region of the device. The punch through induces a current flow between the source and the drain, which allows the MOSFET to operate in the enhanced mode. The electric field is reversed by reverse biased the gate, thus stopping the current flow between the source and the drain. This MOSFET is capable of providing high switching quality due to its fast switching times and low input capacitance.

In summary, the RJK60S7DPP-E0#T2 is an ideal single N-channel enhancement mode power MOSFET device. It is used in a wide range of applications, mainly in DC/DC and AC/DC converters, computer peripherals, digital TVs and audio equipment, portable devices, and other switching circuits. Its main working principle is based on the process of capacitive charging and discharging. This MOSFET provides excellent switching performance and is capable of providing high switching quality due to its fast switching times and low input capacitance.

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