RJK6032DPH-E0#T2

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The RJK6032DPH-E0#T2 is a Power MOSFET transistor designed for use in higher power amplifiers, switches and other applications where high current and power density is required. It utilizes the latest advancements in Power MOSFET technology to provide industry leading performance and reliability in a very small package.

Overview

The RJK6032DPH-E0#T2 is a 30V P-channel Power MOSFET transistor designed for use in higher power amplifiers, switches and other applications requiring both high current and power density. It features advanced design features such as planar stripe and DMOS technology, providing industry leading performance and reliability in a very small package.

This device utilizes a high voltage planar stripe technology which provides superior reliability, superior avalanche energy capability, and superior thermal performance. This device also implements an advanced DMOS power MOSFET technology which provides low RDS(on) ratings by using low resistance source/drain layouts and wide stripe cell geometry.

Features

• 30V drain source voltage
• 800mΩ Static RDS(on)
• 320A Continuous drain current
• 25W Power dissipation
• Advanced planar stripe and DMOS technology
• High power density
• Low gate/drain capacitance

Applications

• Power amplifiers
• Switches and relays
• Voltage conversion devices
• Motor driver circuits
• Voltage regulators
• Battery management systems
• Power supply systems

Working Principle

The RJK6032DPH-E0#T2 is a Power MOSFET transistor that utilises the latest advancements in Power MOSFET technology. The device is designed to provide excellent current and power handling capabilities along with very low power loss in applications requiring high current and power density. The RJK6032DPH-E0#T2 utilizes a high voltage planar stripe technology which provides superior avalanche energy capability and superior thermal performance. This device also implements an advanced DMOS power MOSFET technology which provides low RDS(on) ratings by using low resistance source/drain layouts and wide stripe cell geometry.

When the voltage applied to the gate is zero the MOSFET is in the off state. When a positive voltage is applied to the gate of the MOSFET a depletion region is created and carriers are repulsed from the surface of the channel. This reduces the resistance of the channel and the device starts to conduct, making it an excellent switch. As the voltage applied to the gate increases the channel resistivity decreases further, resulting in a lower RDS(on), which increases the current handling capability of the device.

The MOSFET is also able to provide very low on-state losses due to the low internal capacitance of the device. This ensures that the device can be used for high speed switching applications. It also features excellent switching speeds and very low power dissipation even when high currents are flowing. Overall, the RJK6032DPH-E0#T2 is an excellent choice for applications requiring high current and power density.

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