RJK6013DPP-E0#T2 Allicdata Electronics
Allicdata Part #:

RJK6013DPP-E0#T2-ND

Manufacturer Part#:

RJK6013DPP-E0#T2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH 600V 11A TO220
More Detail: N-Channel 600V 11A (Ta) 30W (Tc) Through Hole TO-2...
DataSheet: RJK6013DPP-E0#T2 datasheetRJK6013DPP-E0#T2 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 30W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 700 mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The RJK6013DPP-E0#T2 is a 60V single N-channel MOSFET transistor that is available in a TO-252 (DPAK) package. It features a low Qg deliver ideal for switch function applications and offers a wide range of 175 mOhm Rds(on). It is commonly used in applications such as lighting, power on/off switching and general control. This article will further explain the application fields and working principles of RJK6013DPP-E0#T2.

The RJK6013DPP-E0#T2 is primarily used as a switch. When a positive voltage is applied to its gate, the N-channel MOSFET forms a conductive channel between the drain and source terminals which initiates the switch-on process. This allows current to flow freely between the source and drain terminals. When the gate voltage is switched off, the channel between the drain and source is removed and the MOSFET is turned off, interrupting the current flow. This switch-like behaviour makes the RJK6013DPP-E0#T2 ideal for controlling a wide range of applications that require an on/off operation, such as lighting and motor control.

Another application area where the RJK6013DPP-E0#T2 is commonly used is in power supply switching. This transistor’s low Qg transition time allows for fast power switching with low power dissipation. The MOSFET’s low on-state resistance and low gate-threshold voltage make the RJK6013DPP-E0#T2 particularly suitable for applications that require high efficiency at low operating voltages. It is an ideal choice for low voltage power supplies such as those used in computers, portable electronics, home appliances and industrial equipment.

The RJK6013DPP-E0#T2 is an N-channel MOSFET Transistor, meaning it is composed of an insulated source, drain and gate layer, where electrons can flow through the material. The conductivity of the material is determined by the amount of voltage applied to the gate layer. Applying a negative voltage to the gate will repel electrons and prevent them from flowing. This results in an increased resistance and the transistor switching off. A positive voltage is applied to the gate, which attracts electrons and forms a conductive channel between the drain and source. This allows current to flow freely, thus switching the transistor on.

The RJK6013DPP-E0#T2 can be used as a switching device in a wide range of applications. Its low gate charge, high current rating and low Rds(on) make it an ideal choice for switching and controlling light, motors and other power supply requirements. Furthermore, its small size makes it suitable for portable applications, while its fast switching speed makes it a good solution for high frequency applications.

The specific data is subject to PDF, and the above content is for reference

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