RJK6018DPK-00#T0 Allicdata Electronics
Allicdata Part #:

RJK6018DPK-00#T0-ND

Manufacturer Part#:

RJK6018DPK-00#T0

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH 600V 30A TO3P
More Detail: N-Channel 600V 30A (Ta) 200W (Tc) Through Hole TO-...
DataSheet: RJK6018DPK-00#T0 datasheetRJK6018DPK-00#T0 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 235 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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RJK6018DPK-00#T0 is a type of field effect transistors, otherwise known as FETs, and a variant specifically in the class of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). It is classified as a single MOSFET device, meaning that it can only control one electrical charge per device.

The RJK6018DPK-00#T0 is a current-controlled device, meaning that it responds to current input in order to control the amount of current output, hence the term “field-effect transistor” – this device operates by reacting to an electrical field applied to its gate, which in turn affects the output from drain and source.

The RJK6018DPK-00#T0 is built with a depletion-mode MOSFET, meaning it is normally ON, and when the current flow is reduced, the device switches OFF. A P-channel MOSFET (as opposed to a N-channel MOSFET) can be used to provide two connecting states: If a positive charge is applied to the drain and source terminals, the device will switch ON and offer low resistance (drain and source will be connected); conversely, if the charge applied to the drain and source terminals is negative, the device will turn OFF, creating high resistance and disconnecting the terminals.

The main application field for the RJK6018DPK-00#T0 is in voltage regulator circuits and switching power supplies, where it is used for power management and circuit control. When compared to a bipolar transistor, its ability to switch ON and OFF (with a lesser drain-source voltage) makes it an efficient choice for these applications. Its applications are not limited to just the DC field, however; its performance in the AC field can also be utilized in power switching circuits, temperature controllers, and other areas of instrumentation.

When operating the RJK6018DPK-00#T0, several parameters must be taken into consideration. In order to maintain the highest possible efficiency and reliability, the device should be operated in such a way that the channel drain current and channel width of the FET device is greater than what is needed for the application in order to control the switch\'s conduction. It is also important that the drain voltage and gate-source voltage (VGS) stay within the specified range for reliable operation.

The design of the RJK6018DPK-00#T0 makes it a versatile choice for many applications. Its ability to operate in the DC and AC fields, its small package size, and strong performance capabilities make it an attractive option for a wide range of applications. It is also cost-efficient and easily implemented, making it a popular choice for circuit designers and engineers alike. With proper operation and design, the RJK6018DPK-00#T0 can be a reliable choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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