RJK6015DPM-00#T1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

RJK6015DPM-00#T1 is a MOSFET device, which stands for metal-oxide semiconductor field-effect transistor, used as a voltage-controlled switch. MOSFETs are widely used in a variety of applications, such as power amplification, switching, level shifting, and many others. In particular, the RJK6015DPM-00#T1 is intended for use in high power applications, such as automotive and industrial power supplies.

A MOSFET acts as a voltage-controlled switch, allowing current to flow between its source and drain terminals when a voltage is present. The control terminal, or gate, responds to a voltage input to turn the device on or off. The voltage applied to the gate determines the amount of current flowing between the source and drain. This is known as the enhancement mode, where the device has to be switched on for current to flow. The device is usually switched off for the depletion mode when there is no gate voltage. This allows for a finer control of the current drawn from the source.

The RJK6015DPM-00#T1 is a single-gate MOSFET device. It is designed for high drain current operation, with a drain-source breakdown voltage (VDSS) rating of 30V and a maximum continuous drain current (ID) rating of 15A. The device has an integrated Charge-Balanced PDS circuitry for improved performance and low on-state resistance (RDS(ON)). The device is manufactured in a TO-220 7-lead package and is RoHS compliant.

The RJK6015DPM-00#T1 is particularly suitable for use in applications that require high drain current, such as automotive power supplies, motor control, and other power conversion applications. It is important to note that the device requires a gate voltage to turn the device on, so an appropriate power source is also required for its operation. Additionally, the device should be used with caution and its operational parameters must be taken into account to ensure safe operation.

In conclusion, the RJK6015DPM-00#T1 is a MOSFET device intended for use in high power applications. Its single-gate architecture and integrated Charge-Balanced PDS circuitry enable high drain current operation with low on-state resistance. The device requires a gate voltage to turn on, and its parameters must be taken into account to ensure safe operation in the intended application.

The specific data is subject to PDF, and the above content is for reference