| Allicdata Part #: | RJK6014DPK-00#T0-ND |
| Manufacturer Part#: |
RJK6014DPK-00#T0 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Renesas Electronics America |
| Short Description: | MOSFET N-CH 600V 11A TO220 |
| More Detail: | N-Channel 600V 16A (Ta) 150W (Tc) Through Hole TO-... |
| DataSheet: | RJK6014DPK-00#T0 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | -- |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3P |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 150W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 575 mOhm @ 8A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 16A (Ta) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The RJK6014DPK-00#T0 is a small signal, low voltage FET (Field-Effect Transistor). It is a single n-channel (increasing resistance as gate voltage goes up) type MOSFET (Metal-Oxide-Semiconductor FET). MOSFETs are used in a variety of applications, and are especially popular for providing gain and switching digital signals. The RJK6014DPK-00#T0 is an especially powerful and efficient FET, capable of driving high current loads with minimal gate voltage drop.
One of the primary applications for RJK6014DPK-00#T0 is in digital circuit switching. The low gate voltage drop allows for more efficient digital switching, where a small voltage applied to the gate can switch a large voltage or current. It is commonly used in logic circuits like CPUs and microcontrollers to control the flow of power through the circuit, allowing for more power efficient operation. It is also used in analog applications where a low voltage or small current is needed to control a large current. This includes audio and video circuits, where small currents are used to drive large speakers or video display devices.
The working principle of the RJK6014DPK-00#T0 is based on the physical structure of the device and the flow of charge through it. The FET consists of three layers: an n-type semiconductor channel, sandwiched between two p-type semiconductor insulators. When a voltage is applied to the gate of the FET, it creates an electric field in the channel between the two insulators. This electric field changes the resistance of the semiconductor channel, allowing more or less current to flow through the device, depending on the polarity of the gate voltage.
Another important application of the RJK6014DPK-00#T0 is in power switching. It is commonly used in high current circuits to provide power on and off control. The low gate voltage drop allows for more efficient power switching, where a small voltage applied to the gate can switch a large voltage or current. It is also used in power converters and power supplies, where it can provide a reliable way to regulate and control the power levels.
The RJK6014DPK-00#T0 is an efficient and powerful FET, capable of providing excellent performance in a variety of applications. It is especially suited to digital switch applications, and can also be used in analog applications where low-voltage control is needed. The ability to control large currents with a small voltage, combined with its low gate voltage drop, make the RJK6014DPK-00#T0 an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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RJK6014DPK-00#T0 Datasheet/PDF