
RJK6025DPD-00#J2 Discrete Semiconductor Products |
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Allicdata Part #: | RJK6025DPD-00#J2TR-ND |
Manufacturer Part#: |
RJK6025DPD-00#J2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 600V 1A MP3A |
More Detail: | N-Channel 600V 1A (Ta) 29.7W (Tc) Surface Mount MP... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | MP-3A |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 29.7W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 37.5pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 17.5 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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RJK6025DP-00#J2 is a single-channel field-effect transistor (FET) manufactured for commercial use by Japanese semiconductor giant Rohm. The transistor exhibits ultra-low on-resistance and is commonly used for power distribution in automotive and consumer electronics applications, along with higher-frequency signal switching or logical control.
RJK6025DPD-00#J2 is also known as a power Metal-Oxide Semiconductor Field-Effect Transistor, or MOSFET. This type of transistor is designed to operate in a fully-on or fully-off state, instead of an analog signal, meaning information is represented as either digital 0s or 1s instead of a range of values. MOSFET transistor devices have many advantages over bipolar transistor devices, including higher switching speed, lower power consumption, no blocking voltage, and enhanced reliability.
The transistor consists of a source, gate and drain, each designed to perform different tasks. The source is an electrode that connects to the source of electrons, while the gateis an insulated gate and the drain is the electrode that collects electrons. Because the gate is insulated, it blocks current from flowing between the source and drain until it has been turned on by applying a gate voltage. When the gate voltage reaches the threshold voltage, current from the source will flow through the channel between the drain and the source.
Realizing its full potential, the RJK6025DPD-00#J2 can provide high-speed operations while offering extremely low on-resistance. This makes it an excellent choice for switching circuits with such high-speed operations, making it much more efficient than previous generations of transistors. It is also capable of handling high power consumption of up to 1,500 volts and 10 amp current and is rated for up to 250 volt tolerances. In addition to logic control, the RJK6025DPD-00#J2 is perfect for power distribution and switching applications.
The RJK6025DPD-00#J2 is made from both porcelain and metal, making it a durable and reliable choice for commercial use. This transistor has extremely low leakage currents and has a low thermal resistance for improved heat dissipation. In addition, it has a maximum operating temperature of 150 degrees Celsius and a wide operating range, making it suitable for a variety of environments.
In conclusion, the RJK6025DPD-00#J2 transistor is a powerful single-channel field-effect transistor manufactured by Rohm that has a wide range of applications and offers advantages such as low power consumption, higher switching speeds, and improved reliability. It is ideal for many different types of applications, including power distribution, switching, and logic control.
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