RJK6014DPP-E0#T2 Allicdata Electronics
Allicdata Part #:

RJK6014DPP-E0#T2-ND

Manufacturer Part#:

RJK6014DPP-E0#T2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH 600V 16A TO220
More Detail: N-Channel 600V 16A (Ta) 35W (Tc) Through Hole TO-2...
DataSheet: RJK6014DPP-E0#T2 datasheetRJK6014DPP-E0#T2 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 575 mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The RJK6014DPP-E0#T2 is a single N-channel logic level-type MOSFET designed for high-speed switching applications such as home appliances and various types of industrial equipment. It is manufactured with a silicon gate dielectric, allowing it to operate at up to 10V and 10A. The device consists of a source, gate and drain, each housed within their own metal contact.

This MOSFET is commonly used in many applications such as motor control, relay control, switching of LEDs, and more. Its low on-state resistance helps reduce power loss over a wide range of loads and enables a wide range of switching frequencies, making it ideal for high-speed applications. Its gallium nitride-based power FET construction also provides low conduction losses and high current capability, suitable for automotives, consumer electronics and most other portable applications.

Another key advantage of the RJK6014 is its linear gate capacitance which allows for excellent RF performance and efficient operation. This helps reduce electromagnetic interference, which is often a concern in electronic devices. The FET\'s fast switching times also help improve efficiency in power control circuits.

In terms of its working principle, the RJK6014DPP-E0#T2 works by using a gate voltage to control the current flowing through the source and drain terminations. When the gate voltage is greater than the source voltage, the ‘on’ resistance is lowered and the device conducts. The amount of current that can be controlled is regulated by the gate voltage. When the voltage is high enough, the device turns on, allowing for current to flow through the source and drain.

The other way that the device works is by having a drain voltage that is greater than the gate voltage. When this is the case, the device will be ‘off’ and no current will flow through the source and drain. The advantages of this are that the device can be used in high frequency switching applications with very low ratings, while still providing satisfactory power control performance.

The RJK6014DPP-E0#T2 is a highly efficient and reliable power switching MOSFET that is well suited for a wide range of high-speed applications. Its fast switching times, low conduction losses, and linear gate capacitance make it particularly valuable in many types of power control circuits and circuitry. It can be used to control a variety of loads and to enhance the efficiency of power control systems.

The specific data is subject to PDF, and the above content is for reference

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