Allicdata Part #: | RN4904(T5LFT)TR-ND |
Manufacturer Part#: |
RN4904(T5L,F,T) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN/PNP PREBIAS 0.2W US6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | RN4904(T5L,F,T) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 200MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | US6 |
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The RN4904 (T5L, F, T) is a pre-biased transistor array, belonging to the class of the bipolar junction transistors (BJT). It is specifically used for low-side gate drive applications. Such applications are used to provide logic level control to high current, high voltage power transistors, i.e. in switching supplies, class D audio amplifiers, motor controls, power converters and any other similar applications. It is characterized by having a wide operating temperature range, from -20°C to +85°C.
This device uses a double-wafer die structure, which enables a lower on-resistance and improved thermal performance. The die structure is also specially designed to preclude the creation of a latch-up circuit, thereby providing a secure flow of electrical current.
The RN4904 is compatible with a large variety of power components, such as IGBTs, MOSFETs, and bipolar power transistors. It is further equipped with overvoltage protection on the gate, which makes it highly dependable when controlling extreme high voltage and power levels. The package is also adapted to be used with dual-package arrays, which makes the device easy to use for multiple channels.
Working Principle
The RN4904 (T5L, F, T) can support two operating states, providing either a resistive or an active drive. In the resistive mode, the device acts as an impedance converter, dropping the voltage level from a higher to a lower level. This is done through the use of electrical resistance, which lowers the voltage. This allows the use of this mode for low current drive tasks, such as the static drive of relays.
The active drive mode utilizes a dedicated driver circuit. This driver circuit consists of a dual power supply, with current mirror outputs that are connected between the power supply and the IC’s output pins. This output can then be used to actively drive any power component, such as IGBTs, MOSFETs, and even bipolar transistors. The addition of the single channel devices allows the modular design of power circuits, by making it possible to connect multiple devices in parallel.
The active drive is also equipped with an active shut down mode, which enables the device to go to a sleep state when not in use. This helps to save power, and reduces overall heat dissipation. In combination with the power supply design and current mirror outputs, this device is able to reach more than 3A of continuous current. This is enough to actively drive most power components.
In conclusion, the RN4904 (T5L, F, T) is a pre-biased transistor array, used for low-side gate drive applications. It is a dependable and cost-effective solution, with a wide operating temperature range, overvoltage protection, and a unique die structure, which enables a low on-resistance and improved thermal performance. It is further equipped with a resistive and active drive mode and an override shut down, making it suitable for a wide range of power components, from relays to high voltage powered transistors.
The specific data is subject to PDF, and the above content is for reference
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