RQ3E075ATTB Discrete Semiconductor Products |
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Allicdata Part #: | RQ3E075ATTBTR-ND |
Manufacturer Part#: |
RQ3E075ATTB |
Price: | $ 0.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CHANNEL 30V 18A 8HSMT |
More Detail: | P-Channel 30V 18A (Tc) 15W (Tc) Surface Mount 8-HS... |
DataSheet: | RQ3E075ATTB Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.31240 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 7.5A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 10.4nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 930pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 15W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-HSMT (3.2x3) |
Package / Case: | 8-PowerVDFN |
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The RQ3E075ATTB is one of the many transistors available today. It belongs to the family of Field-Effect Transistors (FETs) and more specifically to the class of single gate MOSFETs (metal-oxide-semiconductor field-effect transistors). It is an ideal transistor for use in many applications where high performance and low noise are desired.
A FET is a type of transistor, which uses an electric field to control the current through it. Unlike a conventional transistor, which has two controlling electrodes (the base and the emitter current), a FET has only one controlling electrode, the gate, which also serves as the connection between the two channels. This allows it to function like a switch and gives it many advantages over traditional transistors.
The RQ3E075ATTB is a metal-oxide-semiconductor field-effect transistor that has an N-channel enhancement mode. It is an enhancement mode FET, which means that when there is no voltage applied, the transistor is in its off-state. It is used as an analog switch and also as amplifiers and voltage followers. It has very low drain-source on-resistance and excellent noise performance.
The RQ3E075ATTB is suitable for a wide range of applications. Some of the most common uses are switching, audio, low noise amplifiers, low voltage voltage follower devices and power management. It is also used in computers, telecommunications equipment, and consumer electronics. The low voltage operation, low noise and low on-resistance make it ideal for these applications.
The working principle of an RQ3E075ATTB is as follows: when a positive gate voltage is applied, it creates an electric field and charges the gate, which allows current to flow between the source and drain. The drain-source voltage (VDS) is then determined by the gate voltage (VGS). As the VGS increases, the current through the transistor increases. When the VGS is reduced to zero, the drain current reduces to zero, thus turning the transistor off.
The RQ3E075ATTB is a reliable and efficient single-gate transistor with a wide range of applications. Its application field includes switching, audio, low noise amplifiers, low voltage voltage followers, and power management, as well as other electronics. Its working principle involves creating an electric field when a positive gate voltage is applied, allowing current to flow between the source and drain. This helps to determine the drain-source voltage and regulate the current flow.
The specific data is subject to PDF, and the above content is for reference
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