RQ3E100BNTB Discrete Semiconductor Products |
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Allicdata Part #: | RQ3E100BNTBTR-ND |
Manufacturer Part#: |
RQ3E100BNTB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 30V 10A HSMT8 |
More Detail: | N-Channel 30V 10A (Ta) 2W (Ta) Surface Mount 8-HSM... |
DataSheet: | RQ3E100BNTB Datasheet/PDF |
Quantity: | 3000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 10.4 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 2W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-HSMT (3.2x3) |
Package / Case: | 8-PowerVDFN |
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The RQ3E100BNTB is a type of insulated-gate field-effect transistor (INS-FET) that is part of the single MOSFET category. Also known as an enhancement mode transistor, this type of transistor uses a gate voltage to create a conductive channel in the substrate. This type of transistor can be used in various applications, such as power MOSFETs, voltage regulators, and operational amplifiers, to name a few.
The RQ3E100BNTB transistor is the first generation of its kind and has been designed to provide superior performance and durability in a wide range of applications. Notable features include low power loss, low quiescent current, fast switching times, and exceptional insulation properties. In addition, the RQ3E100BNTB can also be used in voltage-sensitive systems and circuits, as it is able to withstand high current, yet withstand low-voltage conditions. This makes it ideal for those applications where tight control of the voltage is required.
A basic RQ3E100BNTB transistor uses a hyperfet technology in its operation. This technology uses a thin-film insulating layer between the gate and the substrate to create an electrical path. This path allows the transistor to be turned off or on in response to changes in the gate voltage. This technology has led to faster switching times, improved insulation, and reduced power loss.
The RQ3E100BNTB transistors are available in a range of internal configurations and can handle power ratings up to 100 Amps and voltages up to 45 Volts. This single MOSFET can be used in various applications such as DC-DC power supplies, line voltage and current regulators, motor speed control, and gate drive signals, just to name a few. In addition, this device can be used to provide a negative switching voltage for circuit protection.
The RQ3E100BNTB single MOSFET can also be used in other applications such as audio, video, data communications, and wireless telecommunication systems. It can also be used to power displays and panel lighting. The device also has a high switching frequency which makes it ideal for high-speed applications such as clock and data systems. Finally, the device can be used to provide efficient current and voltage control, making it useful for operating electronic equipment such as motors and other loads.
The RQ3E100BNTB single MOSFET is a versatile device with a wide range of application fields. It can be used to design power supplies, voltage regulators, audio and video systems, communication and wireless systems, displays, and more. This device is capable of providing efficient and reliable power management, making it a reliable and cost-efficient option for many applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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