RQ3E130BNTB Discrete Semiconductor Products

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The RQ3E130BNTB is a FET (field-effect transistor) device with a single MOSFET structure. It is used in electronic circuits that require a high-power, high-speed, and low-voltage switch. The RQ3E130BNTB has several features that make it an ideal choice for many applications.

The RQ3E130BNTB is rated for operation at up to 300V and 30A, making it an ideal device for high-power, high-voltage applications. It is capable of switching frequencies up to 6 GHz, making it suitable for speeding up the operation of electronic circuits. Its gate capacitance is relatively low, meaning it can be switched on faster.

The drain-source breakdown voltage of the RQ3E130BNTB is 140V, making it suitable for use in medium-voltage circuits. Its 5-ohm on-resistance is also low, meaning it dissipates less power when turned on. This allows it to be used in high-efficiency designs.

The RQ3E130BNTB is built using an advanced dual-gate MOSFET structure, which allows it to operate with both low gate-drain capacitance and low gate-source capacitance. This reduces switching time and reduces distortion in the signal. It also has a high-frequency capability, which makes it suitable for high-speed applications.

The RQ3E130BNTB is ideal for use in high-power, high-voltage switching applications. It is well-suited for use in DC-DC converters, motor drives, power supplies, and other high-power switching applications. It can also be used in high-speed digital circuits, such as communication systems or high-speed pulse and control systems.

The working principle of the RQ3E130BNTB is quite simple. When the gate voltage is zero volts, the MOSFET is in the off state and no current flows from the drain to the source. When the gate voltage is increased, the transistor is in the on state and current flows from the drain to the source. The amount of current that flows is determined by the source-gate voltage and the gate-source voltage.

The RQ3E130BNTB is a versatile device for high-power, high-speed, and low-voltage applications. It features a high-frequency capability, low gate-source and gate-drain capacitance, and low on-resistance, making it an ideal choice for many power switching applications. Its high-voltage rating, low gate capacitance, and low on-resistance also make it well-suited for use in high-speed digital circuits.

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