RQ3E120ATTB Discrete Semiconductor Products

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The RQ3E120ATTB is a single monolithic high-voltage MOSFET (metal-oxide semiconductor field-effect transistor) which uses state-of-the-art trench gate field-stop technology. It is a high-performance device with a low channel on-resistance. This device is a perfect fit for a wide range of consumer electronics, industrial, and automotive applications.

In consumer electronics applications, the RQ3E120ATTB offers superior performance in switching power supplies, computer power supplies, microwave oven power supplies, and air conditioner control systems. The low freewheeling diode turn-off energy combined with its high breakdown voltage offers an ideal solution for these applications. Additionally, the fast switching speed of the RQ3E120ATTB provides an advantage over traditional rectifier diodes, leading to greater efficiency and reduced component count.

The RQ3E120ATTB is also used in automotive applications such as power windows, fuel injectors, and seat memory systems. Its high breakdown voltage enables the device to withstand the harsh and dynamic conditions found in automotive applications. The device is also an excellent choice for industrial applications, such as motor control and drives, inverters, and bridge circuits. Its low on-resistance and fast switching speed provide superior performance for these applications.

The working principle of the RQ3E120ATTB is based on the field-effect transistor (FET) principle, which is similar to a bipolar junction transistor (BJT). In this configuration, the charge carriers (electrons and holes) are injected into a conductive channel created between the source and drain terminals of the device. By applying a voltage between the gate and source, an electric field is created across the channel which controls the flow of charge carriers. This means that the device can be used as a switch, which can be turned on or off depending on the voltage applied to the gate.

The RQ3E120ATTB is a high performance device, which is well suited for a variety of applications. With its high breakdown voltage and low channel on-resistance, the device ensures superior performance in consumer electronics, automotive and industrial applications. The working principle of the device is based on the field-effect transistor (FET) principle, which makes it an ideal device for switching applications.

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