RQ3E180GNTB Discrete Semiconductor Products |
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Allicdata Part #: | RQ3E180GNTBTR-ND |
Manufacturer Part#: |
RQ3E180GNTB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 30V 18A 8-HSMT |
More Detail: | N-Channel 30V 18A (Ta) 2W (Ta) Surface Mount 8-HSM... |
DataSheet: | RQ3E180GNTB Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 4.3 mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 22.4nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1520pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 2W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-HSMT (3.2x3) |
Package / Case: | 8-PowerVDFN |
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The RQ3E180GNTB is a Field Effect Transistor (FET) that belongs to the single MOSFET family. It is a special type of transistor that is designed to control electrical signals. In other words, this FET works by regulating the power it receives and then amplifying it. With its improved power control capabilities and exceptional gain, the RQ3E180GNTB is ideal for a variety of applications.
The RQ3E180GNTB is typically used in portable electronics such as cell phones and laptops. Its enhanced performance and reliability makes it a perfect match for these devices. This FET can be used in a variety of other applications as well, from power supplies to analog circuits. The device is also highly-configurable, allowing for customized operations for each application.
The RQ3E180GNTB’s integrated design makes it well-suited for applications where accuracy is a must. This FET can handle a wide range of voltage levels, giving it the current control capabilities needed for applications such as voltage regulators and motor control. The high frequency capabilities and low input current of the device also make it ideal for radio and television frequency (RF) applications.
The working principle of the RQ3E180GNTB is relatively simple. This FET utilizes a gate that controls the flow of electrical current through the device. This gate works in a manner similar to a valve in a water pipe, allowing for precise control over the current. The voltage applied to the gate controls the amount of current that can flow through the device, and as the voltage increases, more current is allowed to flow.
Generally speaking, the RQ3E180GNTB is an ideal choice for applications where accuracy and power control are needed. This FET can operate over a wide range of voltage levels, giving it tremendous flexibility in varying conditions. The device’s integrated design also allows it to function in extremely small spaces, making it ideal for mobile devices and other space-constrained applications. Overall, the RQ3E180GNTB is an excellent choice for a variety of unique applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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RQ3E180GNTB | ROHM Semicon... | -- | 1000 | MOSFET N-CH 30V 18A 8-HSM... |
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