RQ3E180AJTB Discrete Semiconductor Products |
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Allicdata Part #: | RQ3E180AJTBTR-ND |
Manufacturer Part#: |
RQ3E180AJTB |
Price: | $ 0.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 30V 18A HSMR8 |
More Detail: | N-Channel 30V 18A (Ta), 30A (Tc) 2W (Ta), 30W (Tc)... |
DataSheet: | RQ3E180AJTB Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.29364 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Ta), 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 18A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 11mA |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 4.5V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 4290pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 2W (Ta), 30W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-HSMT (3.2x3) |
Package / Case: | 8-PowerVDFN |
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The RQ3E180AJTB is a type of field-effect transistor (FET), which belongs to the single MosFET category. It is a small transistor formed with an insulated gate and has a very low power consumption. Characterized as an N-Channel enhancement mode device, the RQ3E180AJTB has a maximum drain-source saturation voltage of 18V, a drain-source resistance of 0.0017 Ohms, and a drain-source breakdown voltage of 180V. It is widely used in a variety of applications as it is capable of operating at high frequencies and can handle large current flows.
FETs operate by the movement of electrons. As an N-channel FET, the RQ3E180AJTB has a source, drain and gate. Applying a voltage to the gate influences the electrical characteristics of the transistor, allowing it to act as an amplifier or an interrupt. With bigger voltage sources being used to activate its source and drain, the FET can be used to produce a more significant output. For instance, a laptop computer’s internal speaker’s volume can be controlled by the RQ3E180AJTB.
The RQ3E180AJTB is also commonly used as an on/off switch. When the gate is not connected to any voltage, the transistor is off and current does not flow from the source to the drain. However, the opposite will happen when a voltage is applied to the gate and the transistor becomes turned on. This makes the RQ3E180AJTB an ideal choice for use as a current and voltage controller in circuit boards.
Another application of the RQ3E180AJTB is in power supply management. Due to its low current requirements, it can be used to save power by turning off the power supply when not required. Additionally, the presence of this FET increases the efficiency of the power supply, as voltage regulation and current flow can be easily monitored.
The RQ3E180AJTB is also used in motor control and over-current protection. Since it can be used to switch on/off large currents, it can be used as a direct current switch. Therefore, when a current overload occurs in a motor circuit, the FET can be used to reduce the overload.
The RQ3E180AJTB FET provides very low resistance and high speed switching, making it an excellent choice for all sorts of applications. Its low power consumption and ability to handle high currents make it particularly attractive for use in computers, practical circuits and power supply management.
The specific data is subject to PDF, and the above content is for reference
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