RQ3E160ADTB Allicdata Electronics

RQ3E160ADTB Discrete Semiconductor Products

Allicdata Part #:

RQ3E160ADTBTR-ND

Manufacturer Part#:

RQ3E160ADTB

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 30V 16A 8HSMT
More Detail: N-Channel 30V 16A (Ta) 2W (Ta) Surface Mount 8-HSM...
DataSheet: RQ3E160ADTB datasheetRQ3E160ADTB Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-HSMT (3.2x3)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The RQ3E160ADTB is a 200V, 0.68A, single N-Channel Enhancement Mode MOSFET with a very high resistance to EMI. This MOSFET is commonly used in a wide range of applications, ranging from commercial, domestic and industrial applications.

MOSFETs are a type of field-effect transistor (FET) that use a gate voltage to control the current flow between the source and drain terminals. They are reliable, low-cost and highly-efficient, making them an ideal choice for many applications.

The main characteristics of the RQ3E160ADTB are its 200V drain-source voltage, 0.68A continuous drain current, 0.25A maximum drain-source on-state resistance, 0.0004A threshold voltage and a very low gate series resistance.

In terms of its application field, this MOSFET is primarily used in DC-DC converters, power supply units, power management applications and motor control applications. It can also be used as a high-side switch in combination with low-side switches and can be used in various other applications such as H-bridges, half-bridge converters and voltage regulators.

In terms of its working principle, the gate voltage of the MOSFET determines the current flow between the source and drain terminals. When a gate voltage is applied, it creates an electric field which attracts carriers (electrons or holes) from the source and pulls them toward the drain. This creates a conducting channel between the source and drain, allowing current to flow between them.

The gate voltage can be used to control the current flow. When the gate voltage is increased, the electric field increases, allowing more carriers to be pulled toward the drain, resulting in an increase in current flow. Conversely, when the gate voltage is decreased, the electric field is reduced, resulting in fewer carriers being pulled towards the drain, reducing current flow.

The advantages of using the RQ3E160ADTB MOSFET are its high resistance to EMI, low cost, reliability, and functionality. Its high EMI resistance makes it suitable for use in sensitive applications such as power supply units and DC-DC converters. Its low cost and reliability make it perfect for use in commercial and domestic applications. Its functionality allows it to be used in various applications from motor control to voltage regulation.

In conclusion, the RQ3E160ADTB MOSFET is an extremely reliable, low-cost and highly efficient solution for a wide range of applications. Its application field ranges from commercial, domestic, and industrial applications to sensitive ones such as power supply units and motor control. Its working principle is based on gate voltage controlling the current flow between the source and drain terminals. Its advantages include a high resistance to EMI and low cost, making it a perfect solution for many applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "RQ3E" Included word is 19
Part Number Manufacturer Price Quantity Description
RQ3E180GNTB ROHM Semicon... -- 1000 MOSFET N-CH 30V 18A 8-HSM...
RQ3E120ATTB ROHM Semicon... -- 1000 MOSFET P-CH 30V 12A HSMT8...
RQ3E130BNTB ROHM Semicon... 0.12 $ 1000 MOSFET N-CH 30V 13A HSMT8...
RQ3E100BNTB ROHM Semicon... -- 3000 MOSFET N-CH 30V 10A HSMT8...
RQ3E100GNTB ROHM Semicon... 0.11 $ 1000 MOSFET N-CH 30V 10A 8-HSM...
RQ3E100MNTB1 ROHM Semicon... 0.34 $ 3000 MOSFET N-CH 30V 10A HSMT8...
RQ3E130MNTB1 ROHM Semicon... -- 3000 MOSFET N-CH 30V 13A HSMT8...
RQ3E070BNTB ROHM Semicon... -- 1000 MOSFET N-CH 30V 7A HSMT8N...
RQ3E180BNTB ROHM Semicon... 0.15 $ 1000 MOSFET N-CHANNEL 30V 39A ...
RQ3E180AJTB ROHM Semicon... 0.33 $ 1000 MOSFET N-CH 30V 18A HSMR8...
RQ3E075ATTB ROHM Semicon... 0.35 $ 1000 MOSFET P-CHANNEL 30V 18A ...
RQ3E080BNTB ROHM Semicon... 0.08 $ 1000 MOSFET N-CH 30V 8A HSMT8N...
RQ3E120BNTB ROHM Semicon... 0.12 $ 1000 MOSFET N-CH 30V 12A HSMT8...
RQ3E160ADTB ROHM Semicon... -- 1000 MOSFET N-CH 30V 16A 8HSMT...
RQ3E150BNTB ROHM Semicon... 0.13 $ 1000 MOSFET N-CH 30V 15A HSMT8...
RQ3E080GNTB ROHM Semicon... 0.1 $ 1000 MOSFET N-CH 30V 8A 8-HSMT...
RQ3E150MNTB1 ROHM Semicon... 0.39 $ 1000 MOSFET N-CH 30V 15A HSMT8...
RQ3E120GNTB ROHM Semicon... -- 6000 MOSFET N-CH 30V 12A 8-HSM...
RQ3E150GNTB ROHM Semicon... -- 3000 MOSFET N-CH 30V 15A 8-HSM...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics