RQ3E160ADTB Discrete Semiconductor Products |
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Allicdata Part #: | RQ3E160ADTBTR-ND |
Manufacturer Part#: |
RQ3E160ADTB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 30V 16A 8HSMT |
More Detail: | N-Channel 30V 16A (Ta) 2W (Ta) Surface Mount 8-HSM... |
DataSheet: | RQ3E160ADTB Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-HSMT (3.2x3) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2550pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 51nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 16A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The RQ3E160ADTB is a 200V, 0.68A, single N-Channel Enhancement Mode MOSFET with a very high resistance to EMI. This MOSFET is commonly used in a wide range of applications, ranging from commercial, domestic and industrial applications.
MOSFETs are a type of field-effect transistor (FET) that use a gate voltage to control the current flow between the source and drain terminals. They are reliable, low-cost and highly-efficient, making them an ideal choice for many applications.
The main characteristics of the RQ3E160ADTB are its 200V drain-source voltage, 0.68A continuous drain current, 0.25A maximum drain-source on-state resistance, 0.0004A threshold voltage and a very low gate series resistance.
In terms of its application field, this MOSFET is primarily used in DC-DC converters, power supply units, power management applications and motor control applications. It can also be used as a high-side switch in combination with low-side switches and can be used in various other applications such as H-bridges, half-bridge converters and voltage regulators.
In terms of its working principle, the gate voltage of the MOSFET determines the current flow between the source and drain terminals. When a gate voltage is applied, it creates an electric field which attracts carriers (electrons or holes) from the source and pulls them toward the drain. This creates a conducting channel between the source and drain, allowing current to flow between them.
The gate voltage can be used to control the current flow. When the gate voltage is increased, the electric field increases, allowing more carriers to be pulled toward the drain, resulting in an increase in current flow. Conversely, when the gate voltage is decreased, the electric field is reduced, resulting in fewer carriers being pulled towards the drain, reducing current flow.
The advantages of using the RQ3E160ADTB MOSFET are its high resistance to EMI, low cost, reliability, and functionality. Its high EMI resistance makes it suitable for use in sensitive applications such as power supply units and DC-DC converters. Its low cost and reliability make it perfect for use in commercial and domestic applications. Its functionality allows it to be used in various applications from motor control to voltage regulation.
In conclusion, the RQ3E160ADTB MOSFET is an extremely reliable, low-cost and highly efficient solution for a wide range of applications. Its application field ranges from commercial, domestic, and industrial applications to sensitive ones such as power supply units and motor control. Its working principle is based on gate voltage controlling the current flow between the source and drain terminals. Its advantages include a high resistance to EMI and low cost, making it a perfect solution for many applications.
The specific data is subject to PDF, and the above content is for reference
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