RQ3E180BNTB Discrete Semiconductor Products

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The RQ3E180BNTB is an integrated N-channel MOSFET device that combines high-performance transistors with a low on-resistance MOSFET in one package. It is used in applications where current is transferred between two points without the need for a switch or relay. The device is designed to operate at frequencies up to 30 MHz, making it suitable for use in switching power supplies and motor drives.

The RQ3E180BNTB is a robust and reliable device with features including; a breakdown voltage of ±18 volts, a gate threshold voltage of 4 volts, max on-state drain-source resistance of 0.0056 Ohms and max gate-source voltage of ±10 volts. It also has a continuous drain current of 28 Amps, a drain-source voltage of 250 volts and a power dissipation of up to 5.5 watts.

The RQ3E180BNTB is typically used in a variety of power switching applications such as DC/DC converters, motor drives and class D audio amplifiers. It also offers protection against short-circuit, over-voltage and over-temperature.

The working principle of the RQ3E180BNTB is based on the field-effect transistor (FET) structure. FETs are three-terminal devices that rely on an electric field to control the flow of current. In the case of the RQ3E180BNTB, the device uses an N-channel MOSFET to control the flow of current.

When a voltage is applied to the gate terminal, an electric field is created which induces an electric charge onto the metal oxide gate layer. This charge then modifies the resistance of the channel, allowing electrons to flow through the channel and into the drain terminal.

The gate-source voltage of the device determines the amount of current that can be supplied through the device. This is controlled by the voltage applied to the gate terminal, the size of the channel, and the doping profile of the channel.

The RQ3E180BNTB is a high-performance integrated device that offers a wide range of benefits for power switching applications. It can handle high power levels with minimal power dissipation, it has a low on-resistance that minimizes power losses and its gate-source voltage allows for precise control of the current flow.

The RQ3E180BNTB is a reliable and robust device that is designed to operate reliably in a wide range of power switching applications. Its high-performance characteristics make it ideal for applications such as DC/DC converters, motor drives and class D audio amplifiers.

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