RQ3E130MNTB1 Discrete Semiconductor Products |
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Allicdata Part #: | RQ3E130MNTB1TR-ND |
Manufacturer Part#: |
RQ3E130MNTB1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 30V 13A HSMT8 |
More Detail: | N-Channel 30V 13A (Ta) 2W (Ta) Surface Mount 8-HSM... |
DataSheet: | RQ3E130MNTB1 Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-HSMT (3.2x3) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 840pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 8.1 mOhm @ 13A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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RQ3E130MNTB1 is a type of semiconductor transistor, specifically a field-effect transistor (FET). It is a single N-channel. FETs are commonly used in electronics because they are highly efficient devices that can act as amplifiers, switches, and voltage regulators. RQ3E130MNTB1 uses a metal–oxide–semiconductor (MOS) structure, which allows for greater control over current in circuits by using an insulated gate. The insulated gate is designed to allow for a low current to pass through only when a higher control voltage is applied to the gate.
RQ3E130MNTB1 is primarily used in applications in which high-frequency switching is needed, such as in radio-frequency and microwave circuits. It is also often used in power management systems, where it is used to control the switching of power. In addition, it is used in audio amplifiers and filtering circuits. RQ3E130MNTB1 is popular due to its low on-resistance, which is less than 0.6 ohms, as well as its low gate charge, which is under 3 nC (nano Coulombs).
The working principle of RQ3E130MNTB1 is that it creates a conducting channel between its source and drain electrodes by applying a voltage to its gate electrode. When a voltage is applied to the gate, it creates an electric field that attracts electrons and causes them to accumulate near the gate. This accumulation of electrons reduces the resistance between the source and drain, allowing for a greater current to pass through.
RQ3E130MNTB1 is typically used in power applications, due to its ability to quickly switch between on and off states. This allows for efficient control of current without much power loss. It is also used in audio amplifiers, where it is used to control the current passing through the amplifier. This helps to reduce the amount of distortion that can occur when using the amplifier.
RQ3E130MNTB1 is highly efficient and reliable, making it a popular choice for use in a wide range of applications. Its low on-resistance and low gate charge make it particularly effective in power management systems, radio-frequency and microwave circuits, and audio amplifiers. By controlling the current passing through the circuit, RQ3E130MNTB1 allows for improved efficiency and performance in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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