RQ3E080GNTB Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	16.7 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	5.8nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	295pF @ 15V
FET Feature:	--
Power Dissipation (Max):	2W (Ta), 15W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-HSMT (3.2x3)
Package / Case:	8-PowerVDFN

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The RQ3E080GNTB is a single-type field effect transistor (FET) used in a wide range of electronics applications.A FET is a type of transistor that is composed of one or more layers of semiconductor material. The voltage of the signal being presented to the FET will determine the current flow through the transistor and ultimately the signal produced. It is commonly used in analog circuits, power electronics, and signal processing as a switch or variable resistor.The RQ3E080GNTB specifically is a silicon single FET that has an N-channel enhancement-mode. It is an 80V linear MOSFET that has a drain current of 11A (with a maximum rating of 15A) and a low drain-source on-state resistance. It is designed to provide economical performance with no compromise on reliability.It is designed for a wide range of applications such as power management, motor control, switch mode power supplies, and DC–DC converters. This particular FET is designed to be particularly suitable for applications with high power density requirements.The working principle of the RQ3E080GNTB FET is based on the voltage applied to the gate. When there is a voltage differential between the gate and the drain, the transistor will open or close the channel, allowing current to flow through the transistor or not. This allows the transistor to act as a switch or variable resistor in the circuit, depending on the voltage applied to the gate. The main purpose of the transistor is to provide excellent performance, such as a low on-resistance, fast switching, and excellent thermal stability. The device is also designed to have a low maximum gate-source voltage (V GS ) and is capable of being used in high-current switching applications.The RQ3E080GNTB is a robust and reliable transistor that can be used in a variety of applications due to its excellent performance characteristics and wide range of functions. It has a wide range of operating temperature and can safely be used in high-temperature environments. Additionally, it provides superior thermal stability and low on-resistance for effective current switching with minimal power dissipation.Overall, the RQ3E080GNTB is an ideal choice for a wide range of applications due to its versatile range of functions and reliable performance. It provides excellent performance at a relatively low cost, making it a good choice for a variety of applications.

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