SI4880DY-T1-E3

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The SI4880DY-T1-E3 is a single N-channel depletion-mode metal-oxide semiconductor field effect transistor (MOSFET) produced by Vishay Semiconductor. This type of MOSFET is used to switch signals or small currents such as in low-level analog and digital circuits. It is also appropriate for power application fields.

The SI4880DY-T1-E3 has an RDS(on) rating of 0.03 Ohm, which is significantly smaller than that of MOSFETs with comparable breakdown voltage. This leads to reduced ON-state power losses and improved overall system efficiency.

These properties make the SI4880DY-T1-E3 a popular choice for applications where high efficiency is required, such as switch mode power supplies, DC-DC converters and VRMs. Its low thermal resistance makes it ideal for high power motor drives. It is also used in batteries, battery chargers, and energy storage systems.

The SI4880DY-T1-E3 features a fast switching time, a low gate threshold voltage, high saturation current, and a maximum drain-source voltage of 800V. These characteristics make it suitable for medium power and automotive applications.

The working principle of the SI4880DY-T1-E3 is relatively simple. When the gate voltage is made positive, it attracts electrons from the source, which creates a channel and an inversion layer in the substrate material. This reduces the resistance between the drain and source and allows current to flow from the drain to the source. When the gate voltage is lowered, the channel collapses and prevents current from flowing.

The SI4880DY-T1-E3 is packaged in a TO-252 plastic surface mount package. This allows for simple and reliable mounting of the MOSFET onto a circuit board, as well as easy replacement if ever needed. It also makes it easy to combine multiple devices onto the same board.

In conclusion, the SI4880DY-T1-E3 is a single N-channel depletion-mode MOSFET suitable for low-level and power applications. It features a fast switching time, a low gate threshold voltage, high saturation current, and a maximum drain-source voltage of 800V. It is packaged in a TO-252 plastic surface mount package, making it easy to mount and replace. Its working principle is based on the creation of a channel of electrons between the drain and source when a positive voltage is applied to the gate.

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