SI4838DY-T1-E3

The SI4838DY-T1-E3 is an N-Channel MOSFET from Vishay Siliconix, which belongs to the SI48XX family of devices. The device is packaged in a SOT-23 package and features a drain-source Voltage rating of 20V, a drain current of 1.8A and a Power Dissipation of 1.2W. The device also features an on-resistance of 2.2Ω and an input capacitance of 15pF at a Vds of 5V.

Application Field

The SI4838DY-T1-E3 is suitable for a variety of applications that involve switching signals, such as digital circuits and video signal switching. Due to its high drain current and low on-resistance, it can be used in applications that require high speed switching, such as power MOSFETs. It can also be used in applications that require low power dissipation, such as logic circuits.

In addition to switching applications, the SI4838DY-T1-E3 can be used in circuits that require low voltage operation, such as battery operated circuits. The device is also suitable for high frequency signal processing applications due to its high input capacitance and fast switching time.

Working Principle

The SI4838DY-T1-E3 is an N-Channel MOSFET. It is constructed of an array of two p-type and two n-type semiconductor layers. When a positive voltage is applied to the gate, it forms a depletion region around the channel and thus decreases the number of charge carriers that can flow from source to drain. This causes the drain to source current to be decreased. Conversely, when a negative voltage is applied to the gate, it forms an enhancement region around the channel and therefore increases the number of charge carriers that can flow from the source to the drain, causing the drain to source current to be increased.

The device also features a low on-resistance of 2.2Ω. This is due to the addition of a doping layer at the surface channel of the device, which significantly reduces the channel resistance by increasing the number of free electrons that are available to flow through the channel. This causes a decrease in the on-resistance of the device.

Conclusion

The SI4838DY-T1-E3 is an N-Channel MOSFET from Vishay Siliconix that can be used for a variety of applications that require a high speed switching device. It features a drain-source Voltage rating of 20V, a drain current of 1.8A, a Power Dissipation of 1.2W, an on-resistance of 2.2Ω, and an input capacitance of 15pF at a Vds of 5V. Its low resistance and high current capability make it suitable for a range of digital, video signal and power MOSFET applications.