Allicdata Part #: | SI4833ADY-T1-GE3-ND |
Manufacturer Part#: |
SI4833ADY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 30V 4.6A 8-SOIC |
More Detail: | P-Channel 30V 4.6A (Tc) 1.93W (Ta), 2.75W (Tc) Sur... |
DataSheet: | SI4833ADY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.93W (Ta), 2.75W (Tc) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 750pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | LITTLE FOOT® |
Rds On (Max) @ Id, Vgs: | 72 mOhm @ 3.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.6A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The S4833ADY-T1-GE3 is a type of field-effect transistor (FET), a type of transistor in which electrical current goes through a semiconductor medium. Specifically, the S4833ADY-T1-GE3 is a single-gate metal-oxide-semiconductor field-effect transistor (MOSFET), meaning that it is a type of FET which uses a metal oxide layer as the gate between the semiconductor material and the voltage source. It is commonly referred to as a high-performance transistor due to its low on-resistance and relatively low power dissipation.
The S4833ADY-T1-GE3 has a broad range of applications in electronics. Because of its low power dissipation, it is typically used in power circuits, especially where a small power source is needed, such as in DC-DC converters, audio amplifiers, and motor controllers. It is also used in control circuits, such as in switching applications, where its low input capacitance allows for more precise control. Additionally, the S4833ADY-T1-GE3 can be used in a variety of digital logic circuits, such as RF transceivers and digital signal processors.
The working principle of the S4833ADY-T1-GE3 is based on the principles of FET physics. FETs are composed of three terminals: source, drain, and gate. Voltage is applied across the source and drain terminals, causing current to flow between them. The gate terminal has an insulating layer, typically comprising of a metal oxide, which prevents current from flowing through it. When a voltage is applied to the gate terminal, it creates an electric field between it and the source and drain terminals, which affects the flow of current between them. By controlling the voltage of the gate terminal, the amount of current that can flow between the source and drain terminals can be effectively controlled.
In the case of the S4833ADY-T1-GE3, the gate represents a single-gate MOSFET, meaning that it has only one gate terminal. The gate terminal can be controlled with a voltage, allowing for precise control of the current flowing between the source and drain terminals. The device also features a low on-resistance, which allows for greater efficiency when used in power circuits. Additionally, the device\'s low power dissipation makes it ideal for applications where a small power source is needed, such as in DC-DC converters, audio amplifiers, and motor controllers.
Overall, the S4833ADY-T1-GE3 is a versatile and reliable transistor for a variety of applications. Its low on-resistance and low power dissipation make it well-suited for power circuits, while its control gate allows for fine adjustment of current flow. Its broad range of applications includes DC-DC converters, audio amplifiers, motor controllers, RF transceivers, and digital signal processors.
The specific data is subject to PDF, and the above content is for reference
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