SI4830CDY-T1-GE3

Vgs(th) (Max) @ Id:	3V @ 1mA
Base Part Number:	SI4830
Supplier Device Package:	8-SO
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	2.9W
Input Capacitance (Ciss) (Max) @ Vds:	950pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:	25nC @ 10V
Series:	LITTLE FOOT®
Rds On (Max) @ Id, Vgs:	20 mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C:	8A
Drain to Source Voltage (Vdss):	30V
FET Feature:	Logic Level Gate
FET Type:	2 N-Channel (Half Bridge)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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SI4830CDY-T1-GE3 application field and working principle

SI4830CDY-T1-GE3 is a dual N-channel MOSFET array from Vishay Intertechnology. This device is designed for high-frequency switching applications such as Automotive Ignition systems, High Voltage Switching circuits and high power switching. The device is rated for maximum peak gate-source voltage of +-20V and maximum drain-source voltage of 50V. This device has low static drain-source ON-resistance, fast switching time and low threshold voltage. It can be used in a wide range of applications due to its low drain-source ON-resistance and low gatesource capacitance.

The working principle of the SI4830CDY-T1-GE3 is based on an oxide layer between source and drain which forms a channel. When the gate voltage is increased, it induces an electric field and causes electrons to move to the drain thereby creating an inversion layer or channel. This channel facilitates the flow of current from the source to the drain. The strength of the channel is determined by the gate voltage. The drain-source ON-resistance is determined by the channel length, channel depth and the gate-source voltage. The device has fast switching speed due to its low gate-source capacitance and low threshold voltage. The low on-resistance of the device allows it to handle high currents and voltages with minimum losses.

The SI4830CDY-T1-GE3 can be used in Automotive Ignition system which is used to provide the spark required for engine combustion. The device can be used in high voltage and power switching circuits. It can be used for stabilizing voltage and for providing transient protection. It can also be used for digital logic circuits, as power switches in power converters, and in low-side switches for battery powered systems. The device also has applications in audio amplifiers, motor drives, and in power Management and control circuits.

The SI4830CDY-T1-GE3 is a highly reliable device which has the ability to handle high currents and voltages without sacrificing performance. It has low static drain-source ON-resistance, fast switching time and low threshold voltage which makes it suitable for a wide range of applications. It is suitable for Automotive Ignition systems, highvoltage Switching circuits, and high power switching. This device is a suitable choice for high frequency switching applications due to its high performance and reliability.

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