Allicdata Part #: | SI4850BDY-T1-GE3TR-ND |
Manufacturer Part#: |
SI4850BDY-T1-GE3 |
Price: | $ 0.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V SO-8 |
More Detail: | N-Channel 60V 8.4A (Ta), 11.3A (Tc) 2.5W (Ta), 4.5... |
DataSheet: | SI4850BDY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.28806 |
Vgs(th) (Max) @ Id: | 2.8V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 4.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 790pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | TrenchFET® Gen IV |
Rds On (Max) @ Id, Vgs: | 19.5 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.4A (Ta), 11.3A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI4850BDY-T1-GE3 is a single from the family of transistors and field-effect transistors (FETs). It has various applications and is used for various purposes. The applications include high voltage, high current, and high frequency applications. Additionally, it can also be used as a switch, amplifier, and control circuit. This article will discuss the application field and working principle of the SI4850BDY-T1-GE3.
The SI4850BDY-T1-GE3 is mainly used in applications that require a high voltage, high current, and high frequency. It is typically used as a switch, amplifier, or control circuit. The device provides a high power dissipation, while having a low on-resistance. The low on-resistance results in low switching losses, and the device can provide efficient power conversion. The device is also designed to be able to support high levels of input and output voltages. Additionally, the device has a low Gate to Source capacitance, which allows for higher speed operation.
The SI4850BDY-T1-GE3 has a working principle based on the basic principles of field-effect transistors. It is a type of transistor in which an electric field is used to control the flow of electrons or holes in a semiconductor material. It is also known as an insulated gate field-effect transistor (IGFET). The operation of the device is based on the basic principles of FETs. It has three primary pins, the gate, source, and drain, that are responsible for controlling the flow of electrical current.
In terms of operation, the SI4850BDY-T1-GE3 is designed to have a high input impedance. This enables it to efficiently switch large electrical signals. The device\'s internal circuitry is also designed to have a low input capacitance, thus allowing it to switch faster than conventional FETs. Additionally, it is designed to have fast switching capabilities due to its high rise and fall times.
In conclusion, the SI4850BDY-T1-GE3 is an insulated gate field-effect transistor (IGFET) from the FETs family. It is mainly used in applications that require a high voltage, high current, and high frequency. It is typically used as a switch, amplifier, or control circuit. Its operation is based on the basic principles of field-effect transistors. It has three primary pins, the gate, source, and drain, that are responsible for controlling the flow of electrical current. The device is designed to have a high input impedance, low input capacitance, and fast switching capabilities.
The specific data is subject to PDF, and the above content is for reference
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