SI4842BDY-T1-GE3 Discrete Semiconductor Products

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The SI4842BDY-T1-GE3 is a high-performance N-Channel enhancement-mode power metal oxide semiconductor field-effect transistor (MOSFET) device whose characteristics and advantages make it suitable for a wide range of applications. The SI4842BDY-T1-GE3 is designed for use in a variety of power conversion applications including motor control and power management systems. The high performance, wide operating range and best-in-class on-resistance benefits make it an ideal device for high-efficiency power conversion.

The SI4842BDY-T1-GE3’s main features include excellent gate charging characteristics, high channel mobility, high voltage blocking capability, and low off-state leakage. These features give it a great advantage in both cost and performance when compared to other transistors in the same category. The SI4842BDY-T1-GE3 offers an on-resistance per unit area as low as 1.35mΩ-cm2 and a drain-source on-resistance of 1.25mΩ at 10V. This makes it suitable for a variety of high drain-source voltage applications such as motor control, power management and power conversion systems.

Its working principle is very simple. The SI4842BDY-T1-GE3 is composed of an N-channel gate and an N-channel body that are separated by a gate oxide layer. When sufficient voltage is applied to the gate, the diameter of the channel becomes narrower which increases the resistance through the channel and reduces the off-state leakage current. This in effect reduces the drain-source current because the on-state resistance of the channel increases.

The power efficiency of the SI4842BDY-T1-GE3 is one of its greatest advantages. When compared to other transistors in its category, the SI4842BDY-T1-GE3 offers lower power consumption levels and improved efficiency. This is primarily because of its low on-resistance levels, higher mobility and low off-state leakage current. This ensures that the device is able to deliver a higher conversion efficiency over a wider operating range and longer operation time. The high voltage blocking capability also ensures that the device is able to operate in high voltage applications such as motor control and power management systems.

The SI4842BDY-T1-GE3 is an ideal device for a variety of power conversion and high voltage blocking applications. Its excellent features and performance make it an excellent choice for any application requiring a high level of performance and reliability. The low on-resistance and high mobility of the device make it an ideal choice for a range of power conversion and high voltage blocking applications.

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