SI4850EY-T1-E3

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The SI4850EY-T1-E3 is a dual N-Channel Enhancement Mode Field Effect Transistor (FET) manufactured by Vishay. It is of the MOSFET family, specifically the single type with trench technology. This transistor can be used in a wide range of applications, including power switching, high speed switching, low on-resistance switching, and protection circuits. In this article, the field of application and working principles of the SI4850EY-T1-E3 will be discussed.

Application Field of SI4850EY-T1-E3

The SI4850EY-T1-E3 is a special type of N-Channel MOSFET transistor, which is suitable for a variety of power switching and low on-resistance switching applications. This transistor has a low on-resistance of 3.3 mΩ and a relatively low threshold voltage of 1.0 V for easy control of switching parameters. It also has a very fast switching time of just 10 nanoseconds, making it ideal for high-speed switching. The SI4850EY-T1-E3 also has a high current handling capacity of up to 17 amperes, making it perfect for use in high power applications. Furthermore, this transistor has an increased ruggedness and reliability due to its high-drain to source Reverse Avalanche Energy. This energy helps protect the transistors against over currents and surges, giving it an extended lifespan.

Principle of Operation of SI4850EY-T1-E3

The SI4850EY-T1-E3 is a N-Channel MOSFET transistor, meaning that it is a type of FET (Field Effect Transistor) with a P-type substrate and an N-type channel. The substrate is used as a source terminal, while the channel is used as a drain terminal. A gate electrode is used to control the charge carriers (i.e. electrons) in the channel. The voltage applied to the gate controls the current flow between the source and the drain; an increase in the gate voltage decreases the resistance of the channel and results in greater current flow. This is referred to as the operation of the transistor in the enhancement mode.

The presence of the N-type channel also allows the SI4850EY-T1-E3 to be operated in either the enhancement or depletion mode. In the depletion mode, the voltage applied to the gate increases the resistance of the channel and results in decreased current flow. This is due to the reduction in the number of charge carriers in the N-type channel caused by the potential barrier created by the applied voltage.

The SI4850EY-T1-E3 is a very versatile transistor, making it suitable for a variety of applications. It offers fast switching, low on-resistance and high current handling capacity, as well as enhanced ruggedness and reliability due to its Reverse Avalanche Energy protection.

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