SI7703EDN-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI7703EDN-T1-GE3 is a high-performance 3-terminal N-channel MOSFET (metal oxide semiconductor field effect transistor) for ECU and in-car entertainment systems. Its low on resistance, low gate oxide resistance, and the low-capacitance reverse body diode make it an ideal choice for many automotive power switching applications.

The MOSFET’s operation is based on the principles of gate-controlled high-power switching. The device uses an insulated-gate field effect transistor (IGFET) as its main elements. A voltage is applied to a gate connected to the FET’s source, which creates an electric field in the channel region between the source and the drain. This electric field creates an impact on minority carriers (holes or electrons) in the channel region and changes their flowing. The drain current is thereby regulated.

The SI7703EDN-T1-GE3, being an N-channel device, is an ideal choice for many applications in automobiles. As it features low gate oxide resistance and low voltage, it has very fast switching speed and can provide an excellent switching frequency for driving loads. The device’s low-capacitance reverse body diode further ensures that the signal propagation delays are kept very low, making it suitable for applications such as AC load switch, flickering load, AC signal switch and switching DC loads. The device is also particularly suitable for high efficiency power conversion (HEPC) and electric vehicle battery systems.

The device also offers low-voltage lock-in, which is a feature of many MOSFETs. This means that the device will remain in its “off” state and will stay off until a specific voltage above the threshold voltage is applied to the gate. This property makes the device particularly suitable for applications where it must be absolutely certain that the device will not turn on inadvertently.

In addition, the device offers a wide range of protection features such as overload protection, reverse polarity protection, thermal protection and current overload protection. These features ensure that the device will not be damaged or cause any electrical harm due to incorrect use. The device also features low EMI (electromagnetic interference) emissions, making it suitable for use in electromagnetic-sensitive environments.

In summary, the SI7703EDN-T1-GE3 is an ideal MOSFET for many automotive and other high-power switching applications. Its low on resistance and low-capacitance reverse body diode give it excellent switching speed, making it perfect for applications such as HEPC and electric vehicle battery systems. The device also features low-voltage lock-in, protection features and low EMI emissions, making it safe and suitable for use in many different environments.

The specific data is subject to PDF, and the above content is for reference