SI7738DP-T1-GE3 Discrete Semiconductor Products

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The SI7738DP-T1-GE3 is a MOSFET device designed for power management applications in a variety of different power systems. It is a single device, designed with two independent two-terminal P-channel source terminal FETs and one MOSFET with a drain terminal FET. It is suitable for use in a wide variety of applications, including automotive and industrial power supplies, lighting equipment, and communications products. This device has been designed to provide high-frequency switching capability, making it ideal for applications that require high switching speeds.

The SI7738DP-T1-GE3 provides a simple, cost effective solution for power system design that makes it possible to quickly move power electronics components from prototype stage to production. It utilizes a low-profile package, which provides a more compact footprint, allowing designers to easily accommodate it into their power systems. The device also provides a low on-resistance and low gate charge, resulting in a high-efficiency design. In addition, the device can be operated with a reverse polarity voltage which allows the device to be operated in either a negative or positive ground system.

The SI7738DP-T1-GE3 is designed with a two-terminal P-channel source terminal FET and a MOSFET with a drain terminal FET. This allows for a fast switching speed and low on resistance. The device also has a self-aligning gate, which makes it easy to set-up during the design process. The device is designed for low gate charge, as well as low output capacitance, which helps reduce power losses in the power system design.

The SI7738DP-T1-GE3 is designed with a N-Channel enhancement type MOSFET which helps reduce the switching losses and increases the efficiency of the power system. The device also includes a reverse polarity voltage operation, which allows the device to operate in either a positive or negative ground system. This allows the device to be used in a wide range of applications, including automotive and industrial power supplies, lighting equipment, and communications products.

The SI7738DP-T1-GE3 is designed for high-frequency power management in a variety of different systems. By utilizing its low on-resistance, low-output capacitance, and high switching speeds, the device allows for quick and efficient power system design. Furthermore, the self-aligning gate helps reduce the set-up time and makes it easier to design a power system with the device. The reverse polarity voltage operation also allows the device to be used in a variety of applications.

The SI7738DP-T1-GE3 is a versatile and cost-effective MOSFET device designed for power management applications in a variety of different systems. It features a low on-resistance and low gate charge, resulting in a high-efficiency design. In addition, the reverse polarity voltage operation allows the device to be used in a variety of applications, such as automotive and industrial power supplies, lighting equipment, and communications products. The device also has a high switching speed and low output capacitance, allowing for quick set-up and a more efficient power system design.

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