SI7738DP-T1-E3

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Introduction

SI7738DP-T1-E3 is a Single N-Channel Enhancement-Mode MOSFET. Like most MOSFETs, SI7738DP-T1-E3 is used to switch current in a circuit and can function as an amplifier. SI7738DP-T1-E3 particularly offers low RDS(on), low gate charge, and is built for low voltage operation.

Application Fields

SI7738DP-T1-E3’s versatile design makes them an excellent choice for low voltage switch-mode applications in many industries. They are often used in consumer electronics and telecommunications, automotive infotainment systems, LED lighting, LED displays, control systems, and switch-mode power supplies.

Since this MOSFET is small and power efficient, it is also utilized in portable, wearable, and medical device applications. Some examples of portable and wearable uses for this MOSFET include medical implantable devices, heart rate monitors, car KVM systems, and tablet computers.

Working Principle

SI7738DP-T1-E3 is a N-Channel Enhancement-Mode MOSFET. MOSFETs work by switching the current between the gate and the drain, which is controlled by the external voltage applied to the gate. MOSFETs also act as voltage-responsive resistors between the Source and Drain; their resistance is modulated by the gate-source voltage. In order to function, the MOSFET relies on the arrangement of positive and negative charges in the charge layer along the silicon-oxide interface.

The circuitry of the source and drain is etched into the silicon-oxide interface layer, as a technical reference – Oxide-Nitride-Oxide (ONO). In the MOSFET structure, the gate forms an electric field that modulates charge carriers within the gate’s ONO layer and determines the resistor\'s circuit resistance. The gate creates a conductive channel between the source and the drain, allowing current to flow through the circuit.

The SI7738DP-T1-E3 is designed for low voltage operation (33V), which makes it suitable for use with low power circuits. The MOSFET is also designed with a low RDS(on) (4.4 mΩ @ VGS = 4.5V/3.3V) and low gate charge (13.0nC @ VGS = 4.5V/3.3V) which enables fast switching and high power efficiency.

Conclusion

SI7738DP-T1-E3 is a Single N-Channel Enhancement-Mode MOSFET and is an excellent choice for low voltage switch-mode applications. Its unique design enables it to have a low RDS(on) and low gate charge, which make it suitable for use in low power circuits. SI7738DP-T1-E3 is often used in consumer electronics and telecommunications, automotive infotainment systems, LED lighting, LED displays, control systems, and switch-mode power supplies.

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