SI7784DP-T1-GE3

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The SI7784DP-T1-GE3 is a logic-level dual N and P channel enhancement mode power MOSFET. It is an ideal part for low power applications as it offers a low gate charge and low RDS(on). It is designed for systems where low gate charge, low resistive losses and fast switching are required.

The SI7784DP-T1-GE3 is a 60 V MOSFET with a breakdown voltage of 60 V, an on-state resistance of 10 mΩ at 4.5 V and a gate threshold voltage of 4 V. This MOSFET is suitable for applications such as switching power supply, DC/DC converter, power amplifier and other switching applications.

The SI7784DP-T1-GE3 is capable of switching operations up to 6A at 25℃ and 4.5V and can achieve a high switching speed of 47 nsec. The part features low on-state resistance, fast switching time and tight threshold voltage control. This MOSFET is a high performance part for use in logic level applications.

The SI7784DP-T1-GE3 has an ultra-low gate charge (Qg) which enables lower stand-by current and power dissipation. It also features an avalanche-proof body diode with a fast reverse recovery time and low RDS(on). The exceptional drive capability of the device makes it suitable for a wide range of applications.

The SI7784DP-T1-GE3 is a depletion mode MOSFET, which has a negative threshold voltage. This type of MOSFET uses a negative gate voltage to switch it on and off. When the voltage across the gate and source is positive, the MOSFET is switched on as the gate pulls current through the channel. When the voltage across the gate and source is negative, the MOSFET is switched off as the gate repels current through the channel.

The SI7784DP-T1-GE3 is suitable for a wide range of applications such as battery powered devices, low voltage DC/DC converters, power amplifiers, power switches and other switching applications. The low gate charge, low on-state resistance and fast switching speed of the device make it an ideal choice for low power applications requiring tight control and fast response times.

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