
Allicdata Part #: | SI7720DN-T1-GE3TR-ND |
Manufacturer Part#: |
SI7720DN-T1-GE3 |
Price: | $ 0.69 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 12A 1212-8 |
More Detail: | N-Channel 30V 12A (Tc) 3.8W (Ta), 52W (Tc) Surface... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.69000 |
10 +: | $ 0.66930 |
100 +: | $ 0.65550 |
1000 +: | $ 0.64170 |
10000 +: | $ 0.62100 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | PowerPAK® 1212-8 |
Supplier Device Package: | PowerPAK® 1212-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -50°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 52W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1790pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | SkyFET®, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 12.5 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI7720DN-T1-GE3 is a logic level field-effect transistor (FET) specifically made by Vishay. Due to its integrated capability to switch high-side loads and its very low drain-source on-state resistance, the SI7720DN-T1-GE3 provides cost-effective solutions when used in automotive and industrial applications.The SI7720DN-T1-GE3 is also known as an n-type metal oxide semiconductor FET (MOSFET). It belongs to a family of Field-Effect Transistors commonly called MOSFETs. A MOSFET is a semiconductor device whose channel conductivity is modulated by the application of an electric field. It is the basic building block for integrated circuits and is used to control the flow of electrical current in electronic circuits.The SI7720DN-T1-GE3 is a single channel MOSFET, which means that it has one source, one gate, and one drain. It is a logic level device, meaning that it has a low gate-source threshold voltage VGS-th, typically 2 V. This device is specifically designed to switch high side loads and is typically used when high speed switching is required.The SI7720DN-T1-GE3 has a rated drain-source voltage VDS of 30 V and a maximum drain-source on-state resistance RDS(on) of 0.7 Ω. This makes it suitable for automotive and industrial applications such as solenoid valve, motor control, DC fan manual speed control and current sense applications.The SI7720DN-T1-GE3 has a maximum drain current of 5 A, making it suitable for applications requiring higher currents. The device has a logic level turn-off, meaning that the voltage at the gate must be less than the threshold voltage for it to fully shut off. Furthermore, the device has a maximum operating temperature of -40° C to 150° C, allowing it to work in a wide range of temperatures.The SI7720DN-T1-GE3 is an ideal choice for applications requiring high-side load switching, low drain-source on-state resistance , and a smaller package size. It is commonly used in applications such as automotive valves, current sensing, and speed control motors. Thanks to its integrated capabilities, it is a cost-effective solution for a range of applications.
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