SI7742DP-T1-GE3

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The SI7742DP-T1-GE3 is a unique type of transistor that was designed by Siliconix, now a division of Vishay Intertechnology. This transistor is a specialized type of Field Effect Transistor (FET), specifically a Single P-Channel Enhancement Mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is unique because it has its own bias circuitry built in, making it a convenient and easy to use alternative to many of the discrete devices currently in use.

The SI7742DP-T1-GE3 is designed to operate in circuits with a gate-source voltage of up to ±20 volts, allowing it to be used in a variety of devices. It can be used in everything from power supplies to audio amplifiers and a raft of other consumer and industrial electronic designs. It is rated for a maximum drain current of 21.6A and a maximum drain-source voltage of 30V. This makes it perfect for a variety of applications and devices that require a particular type of transistor.

The on resistance of the SI7742DP-T1-GE3 is rated at 0.018 ohms, making it ideal for circuits that require very low losses for efficiency. This is just one of the features that make this transistor an excellent choice for use in power supplies and other portable or low power applications. The off-state leakage current of the device is also very low at less than a microamp. This allows it to retain its low on resistance even in low power situations.

From a technical perspective, the SI7742DP-T1-GE3 is one of Siliconix’s most advanced products. The device has a unique “Gate-Source Threshold Voltage” (GST), which provides an “on” resistance that is independent of the gate-source voltage. This feature allows the device to remain operational even at very high gate-source voltages, up to ±20 volts with no effect on the operating parameters. This type of device is ideal for applications that are subject to extreme temperature ranges or harsh environmental conditions.

In addition to its unique gate-source threshold voltage feature, the SI7742DP-T1-GE3 also has a fast switching speed. This quickly turns the device on and off, allowing it to be used in high-speed, high-performance circuits. The device also provides a reliable structure, with double isolation technology to protect the device and make sure it works properly over its lifetime. These features make the SI7742DP-T1-GE3 an excellent choice for all sorts of applications.

In conclusion, the SI7742DP-T1-GE3 is a specialized single p-channel enhancement mode MOSFET designed by Siliconix. It is designed to operate in circuits with gate-source voltages of up to ±20 volts and is rated for a maximum drain current of 21.6A and a maximum drain-source voltage of 30V. The on resistance of the device is 0.018 ohms and it has a unique Gate Source Threshold Voltage feature, allowing it to remain operational even at high gate-source voltages. It also has a fast switching speed and double isolation technology for reliable operation over time. These features make the SI7742DP-T1-GE3 an ideal choice for a wide range of power-related applications.

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