Allicdata Part #: | SI7718DN-T1-GE3TR-ND |
Manufacturer Part#: |
SI7718DN-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 35A 1212-8 |
More Detail: | N-Channel 30V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface... |
DataSheet: | SI7718DN-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | PowerPAK® 1212-8 |
Supplier Device Package: | PowerPAK® 1212-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 52W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI7718DN-T1-GE3 is a single N-channel enhancement mode field effect transistor (FET) that utilizes silicon-gate CMOS technology. It is a power device developed for use in mobile communication systems when high dc/dc conversion efficiency and low noise is required. This device has very low input drain and source capacitances and operates with an input voltage of 4.5V to 18V.
Application Field
The SI7718DN-T1-GE3 can be used in a variety of applications in both the commercial and industrial sectors. It is well-suited for use in power management for portable devices, battery charge controllers, and low voltage power conversion circuits.
In addition to providing low power dissipation, this device also incorporates a high-voltage source/drain breakdown voltage, making it suitable for applications such as high-speed switching, high-power applications, and battery charge controllers.
The integrated Schottky diode of SI7718DN-T1-GE3 allows for efficient energy transfer between the battery and the load. This makes it an ideal solution for use in DC/DC converters, inverters, and power supply applications.
Working Principle
The SI7718DN-T1-GE3 is a single N-channel enhancement mode FET. It operates by allowing electrons to pass from the source to the drain when a voltage is applied to the gate. This voltage is known as the “threshold voltage” and when it is exceeded, current will begin to flow through the device.
The device has low on-resistance, which is the resistance measured between the drain and the source when the gate voltage is at or above the threshold voltage. This is an important feature for applications where power efficiency is a priority, as it reduces the amount of energy lost as heat.
In addition, the device also has a low input capacitance and a high breakdown voltage, making it suitable for high-frequency and high-power applications. It can also provide very high switching speeds, making it well-suited for use in time-sensitive applications.
Conclusion
The SI7718DN-T1-GE3 is a single N-channel enhancement mode FET that combines low on-resistance, low input capacitance, and a high breakdown voltage. It is well-suited for use in portable devices, battery charge controllers, and other low power conversion circuits. This device also provides very high switching speeds and is suitable for use in high-frequency and high-power applications.
The specific data is subject to PDF, and the above content is for reference
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