| Allicdata Part #: | SI7758DP-T1-GE3TR-ND |
| Manufacturer Part#: |
SI7758DP-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 30V 60A PPAK SO-8 |
| More Detail: | N-Channel 30V 60A (Tc) 6.25W (Ta), 104W (Tc) Surfa... |
| DataSheet: |  SI7758DP-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2.7V @ 250µA |
| Package / Case: | PowerPAK® SO-8 |
| Supplier Device Package: | PowerPAK® SO-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 6.25W (Ta), 104W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 7150pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 160nC @ 10V |
| Series: | SkyFET®, TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 2.9 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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SI7758DP-T1-GE3 is a high voltage, low on-state resistance, N-channel power trench MOSFET. It is designed for low voltage high speed switching applications. It has a drain-source voltage of 650V, a very large gate threshold voltage of 4.5V, a drain current of 5A and an on-state resistance of 4.9 mOhms. This device is designed to reduce power dissipation and to improve reliability.
Application Field of SI7758DP-T1-GE3
SI7758DP-T1-GE3 are most suitable for applications where high-speed switching and high current capability with low on-state resistance is desired. It is used in switching applications where low voltage, high current and low on-state resistance is required. Applications include lighting control systems, computer peripheral power managements, automotive electronic control systems, and various other power system protection and control systems.
Working Principle of SI7758DP-T1-GE3
The working principle of SI7758DP-T1-GE3 is based on the MOSFET principle (metal-oxide-semiconductor field effect transistor). The MOSFET principle has two main components: the gate and the drain-source region. The gate is responsible for controlling the flow of current between the drain and the source. The gate is controlled by a voltage applied to the gate electrode. When a positive voltage is applied to the gate, it attracts a body of electrons from the drain-source region and forms a channel. This allows current to flow from the drain to the source. When the voltage at the gate is reduced, the channel is closed and the current is cut off.
The on-state resistance of SI7758DP-T1-GE3 is also controlled by the gate voltage. When the gate voltage is increased, the on-state resistance of the device is decreased. This makes the device suitable for high-speed switching applications. Additionally, the high voltage rating of the SI7758DP-T1-GE3 makes it suitable for use in high voltage applications.
Conclusion
In conclusion, SI7758DP-T1-GE3 is a high voltage, low on-state resistance N-channel power trench MOSFET. It is designed for low voltage high speed switching applications. It has a drain-source voltage of 650V, a very large gate threshold voltage of 4.5V, a drain current of 5A and an on-state resistance of 4.9 mOhms. It is suitable for applications where high-speed switching and high current capability with low on-state resistance is desired. Its working principle is based on the MOSFET principle, where a gate voltage is used to control a channel between the drain and the source, and the on-state resistance is also controlled by the gate voltage.
The specific data is subject to PDF, and the above content is for reference
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