| Allicdata Part #: | SI7790DP-T1-GE3TR-ND |
| Manufacturer Part#: |
SI7790DP-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 40V 50A PPAK SO-8 |
| More Detail: | N-Channel 40V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface... |
| DataSheet: |  SI7790DP-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | PowerPAK® SO-8 |
| Supplier Device Package: | PowerPAK® SO-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 5.2W (Ta), 69W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4200pF @ 20V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The SI7790DP-T1-GE3 is a type of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) with an integrated gate-source-drain structure. The device is a low voltage and low on-resistance MOSFET which can be used in applications such as power supplies, motor drives, and electric vehicles.
The SI7790DP-T1-GE3 has an integrated gate-source-drain structure, which makes it suitable for use in high-side and low-side switching applications. The device can be operated up to a voltage of 600 volts and a rated current of 150 amps. With an on-state resistance of just 1 milliohm, the device offers excellent low on-state resistance, allowing for improved efficiency in power systems.
The SI7790DP-T1-GE3 is a fast switching device, which makes it suitable for use in motor drives and other high-speed applications. The device can operate at switching frequencies of up to 100 kHz, allowing for faster response times and more efficient power transfer. The device is also resistant to reverse polarity, making it suitable for use in automotive applications.
The SI7790DP-T1-GE3 is a low-voltage device with an operation voltage range of 2 to 10 volts. The device has a threshold voltage of 3 volts, meaning that it can be operated at even lower voltages. This feature makes the device ideal for use in applications for power supplies, where low operational voltages are desirable.
The SI7790DP-T1-GE3 is a robust, high-performance device which is suitable for use in a variety of applications. The device has a very low on-resistance, making it suitable for high-efficiency power systems. It is also fast switching and resistant to reverse polarity, making it suitable for use in motor drives and electric vehicles. Additionally, its low operating voltage range makes it ideal for use in power supplies and other applications where low voltage is desirable.
The specific data is subject to PDF, and the above content is for reference
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