SI7748DP-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI7748DP-T1-GE3TR-ND

Manufacturer Part#:

SI7748DP-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 50A PPAK SO-8
More Detail: N-Channel 30V 50A (Tc) 4.8W (Ta), 56W (Tc) Surface...
DataSheet: SI7748DP-T1-GE3 datasheetSI7748DP-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 56W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3770pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
Series: SkyFET®, TrenchFET®
Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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SI7748DP-T1-GE3 is a single power MOSFET designed specifically for switching applications. It is a vertical N-channel MOSFET packaged in a TO-92 style SMD (surface mount device). The MOSFET is a common switching component used in many applications and can be found in virtually any electronic circuit or device. The SI7748DP-T1-GE3 is designed to provide fast switching speeds and is suitable for use in both high- and low-frequency applications. As a single power MOSFET, the SI7748DP-T1-GE3 has an upper gate voltage (VGS) of -20V and a lower gate voltage (VGS) of -5V. With a maximum drain current (ID) of 12A, the device is suitable for use in power switching applications.

The SI7748DP-T1-GE3 can be used in a wide range of applications, including power supplies, LED lighting, motor control, DC/DC converters, and more. It has a number of advantages over other types of transistor, such as low on-resistance and extremely fast switching speeds. The device also includes built-in protection features, such as overvoltage protection and overtemperature protection, which help protect the system from damage due to unexpected conditions. Overall, the SI7748DP-T1-GE3 is a reliable and efficient power MOSFET that can be used in a variety of applications.

The working principle of the SI7748DP-T1-GE3 is based on the basic characteristics of a MOSFET, which is that it acts as a switch. When the gate voltage (VGS) is applied, it activates the device and allows current to flow from the drain to the source. The amount of current that can flow through the device is controlled by the gate voltage and the size of the MOSFET itself. In the case of the SI7748DP-T1-GE3, the device has a max drain current (ID) of 12A, which means that up to 12A can flow through the device when the VGS is applied. As the gate voltage is increased or decreased, the amount of current that can flow through the device will also change, allowing it to be controlled in a precise manner.

Overall, the SI7748DP-T1-GE3 is a versatile and reliable power MOSFET that can be used in a wide range of switching applications. It is capable of providing fast switching speeds and has built-in protection features for added protection. With its wide range of applications, the SI7748DP-T1-GE3 is an effective and reliable choice for many projects.

The specific data is subject to PDF, and the above content is for reference

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