SPP10N10

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SPP10N10 is a lateral insulated-gate field-effect transistor (IGFET) that is made with an N-channel vertical configuration in order to reduce the on-resistance, provide better working performance and long lifetime. It is suitable for high current applications and is used in lighting, motor drive, and power conversion systems.

The SPP10N10 device consists of a gate, drain, source, and a buried layer that is capable of reducing the switching loss of the device. The lateral insulated-gate field-effect transistor (IGFET) has a low threshold voltage of approximately 2V, making it suitable for low voltage switching applications. The operating temperature range is between -55℃ to 150℃, making the SPP10N10 suitable for commercial and industrial applications. The device is available in the TO-220F package, which is a robust and versatile package with excellent thermal and electrical performance, making it suitable for various end products.

The SPP10N10 device has an on-resistance as low as 1Ω and can handle high current up to 15A, making it suitable for high power applications such as power conversion, motor drive, and lighting. It provides an efficient switching performance with a low capacitance and low gate charge, resulting in a high switching speed. The built-in diode of the device ensures a fast turn-on and short-circuit protection, and the built-in body diode protects the device from high levels of reverse voltage.

The SPP10N10 device is a robust device that has excellent electrical, thermal, and switching performance. It has a fast switching speed and a low capacitance & low drive which result in a low switching loss. The low on-resistance and high current capability make the SPP10N10 suitable for high power applications. The built-in diode and body diode ensure fast turn-on and short-circuit protection, and the TO-220F package provides robustness and versatility for various end products.

The working principle of the SPP10N10 device is based on the fact that a reverse-biased junction between the source and the drain will discourage the current flow due to the presence of the electric field. When a negative voltage is applied to the gate, the electric field will break down the reverse-biased junction, which will allow the current to flow from source to the drain. By controlling the voltage applied to the gate, the device can be used to control the flow of current.

The SPP10N10 is widely used in motor drives, lighting, and power conversion systems due to its low on-resistance, fast switching speed, and low capacitance & low gate charge. It is suitable for high current applications and is available in the robust and versatile TO-220F package. The built-in diode and body diode provide short-circuit protection and the operating temperature range is suitable for commercial and industrial applications.

The specific data is subject to PDF, and the above content is for reference