Allicdata Part #: | SPP11N60CFDHKSA1-ND |
Manufacturer Part#: |
SPP11N60CFDHKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 600V 11A TO-220 |
More Detail: | N-Channel 600V 11A (Tc) 125W (Tc) Through Hole PG-... |
DataSheet: | SPP11N60CFDHKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 500µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO220-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 64nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 440 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The SPP11N60CFDHKSA1 is a single-pole, double-throw, n-channel MOSFET with a low on-resistance and high blocking voltage. It is one of the most widely used and versatile types of field-effect transistors (FETs). The SPP11N60CFDHKSA1 is designed to facilitate the efficient switching of loads, such as actuators, motors, and relays, in a variety of applications. Furthermore, it is well suited for switching high-voltage, large-current loads and can be used in both power and low-power circuits.
The SPP11N60CFDHKSA1 is characterized by its low on-resistance and high blocking voltage, made possible due to the use of an n-channel FET and a low RDSon-resistance value of 60mΩ. The low on-resistance of the SPP11N60CFDHKSA1 ensures that it can efficiently switch high-voltage, large-current loads. The high blocking voltage of the FET, on the other hand, ensures that it can withstand high voltages when used in a power supply circuit.
The SPP11N60CFDHKSA1 operates on the principle of a metal-oxide-semiconductor (MOS) structure, where a polysilicon gate is positioned between a source and a drain. When a potential is applied to the gate, it creates a conductive channel between the source and the drain, allowing current to flow through the transistor. This type of transistor is commonly used in power switching applications because of its high input impedance and low on-resistance.
The SPP11N60CFDHKSA1 is ideal for a wide range of applications. It is often used in power supplies, inverters, logic gates, power switching circuits, and many other applications requiring efficient switch control. It can also be used to drive motors, relays, and other inductive loads. Additionally, it is well suited for gate driving applications in motor control and switching circuits.
Overall, the SPP11N60CFDHKSA1 is a reliable, efficient, and versatile field-effect transistor (FET) with a low on-resistance, a high blocking voltage, and a wide range of applications. It is one of the most popular types of MOSFETs for power switching, logic circuits, and motor control applications. The FET’s low on-resistance and high blocking voltage make it well suited for switching loads, driving motors, and switching power supplies. Additionally, its MOS structure makes it ideal for controlling the flow of current in power switching and logic circuits.
The specific data is subject to PDF, and the above content is for reference
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