Allicdata Part #: | SPP11N65C3XKSA1-ND |
Manufacturer Part#: |
SPP11N65C3XKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 11A TO-220 |
More Detail: | N-Channel 650V 11A (Tc) 125W (Tc) Through Hole PG-... |
DataSheet: | SPP11N65C3XKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 125W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO220-3-1 |
Package / Case: | TO-220-3 |
Series: | CoolMOS™ |
Packaging: | Tube |
Part Status: | Obsolete |
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The SPP11N65C3XKSA1 is a type of power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is a permanent, single-pole single-throw monolithic device having large voltage ratings, current ratings and power dissipation, and small die area. It is highly reliable and features a large temperature range.
Generally, the SPP11N65C3XKSA1 is used in applications where high current operation is desired, along with high switching speeds. It can be applied in automotive electronics, power conversion, robotics and other industrial applications. It features very low gate threshold voltage, low on-resistance and good switching frequency which can save board space and cost at the same time.
The SPP11N65C3XKSA1 works by electrically controlling a large current flow in a single direction by applying a low power electrical input signal. A low voltage applied to the gate electrically isolates a part of the device’s silicon between the gate and drain region. This in turn allows for current flow between the two regions when a voltage is applied between the source and drain regions. This allows for the SPP11N65C3XKSA1 to be able to switch high current flow between two states of conduction.
As a result, the SPP11N65C3XKSA1 can offer high speed switching with efficient energy consumption, making it an ideal choice for high current applications. Additionally, its high temperature range, high current and voltage ratings, and low power dissipation make it a great option when dealing with high power applications. As a whole, the SPP11N65C3XKSA1 power MOSFET is the perfect solution when dealing with large current and voltage applications that require a reliable and efficient solution.
The specific data is subject to PDF, and the above content is for reference
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