| Allicdata Part #: | SPP12N50C3XKSA1-ND |
| Manufacturer Part#: |
SPP12N50C3XKSA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | LOW POWER_LEGACY |
| More Detail: | |
| DataSheet: |  SPP12N50C3XKSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | * |
| Part Status: | Obsolete |
Description
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SPP12N50C3XKSA1 is a type of Level-FET which is a brand of Field Effect Transistor (FET). A field effect transistor (FET) is a type of transistor that controls current between two terminals, called the source and the drain, using an electric field. Unlike a traditional bipolar junction transistor (BJT) which relies on the movement of charge carriers from the collector region to the base or from the base to the collector, a field effect transistor (FET) instead uses a semiconductor gate terminal to control the flow of electrons between the source and the drain.The SPP12N50C3XKSA1 is a single N-Channel MOSFET which is specifically designed for high frequency switching applications. It has a maximum Drain-Source voltage of 50V and a maximum channel current of 12A with low RDS(on). This device is designed with a good combination of fast switching speed, high on-resistance and low capacitance. The device has excellent thermal characteristics and features protection features such as: reverse current protection, high level gate-source voltage protection, and over-voltage protection.The SPP12N50C3XKSA1 can be used to control the current in a variety of applications. It is used in applications such as DC/DC converters, automotive DC/DC converters, battery chargers and DC power supplies. It can also be used in high efficiency lighting applications, wireless power transmission, low noise high current buck converters, and other high frequency switching applications.The working principle of the SPP12N50C3XKSA1 is based on its physical structure. The device has three terminals, the source, gate and drain. The source and drain are connected to an N-type semiconductor, while the gate is connected to a P-type semiconductor. When the device is activated, a voltage is applied to the gate terminal, which attracts electrons from the source terminal to the gate terminal. This creates a depletion region between the source and the gate terminals which inhibits current from flowing through the device. By controlling the voltage on the gate terminal, the user is able to control the current flow between the source and the drain.In conclusion, the SPP12N50C3XKSA1 is a type of single N-Channel MOSFET which is specifically designed for high frequency switching applications. It features a maximum Drain-Source voltage of 50V and a maximum channel current of 12A with low RDS(on). The device can be used to control the current in a variety of applications. It has excellent thermal characteristics and features protection features such as: reverse current protection, high level gate-source voltage protection, and over-voltage protection. The working principle of the SPP12N50C3XKSA1 is based on its physical structure, where a voltage is applied to the gate terminal in order to control the current flow between the source and the drain.
The specific data is subject to PDF, and the above content is for reference
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