Allicdata Part #: | SPP15P10PGHKSA1-ND |
Manufacturer Part#: |
SPP15P10PGHKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 100V 15A TO-220 |
More Detail: | P-Channel 100V 15A (Tc) 128W (Tc) Through Hole PG-... |
DataSheet: | SPP15P10PGHKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.1V @ 1.54mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 128W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1280pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 240 mOhm @ 10.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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SPP15P10PGHKSA1 Application Field and Working Principle
SPP15P10PGHKSA1 is a family of general purpose N-Channel MOSFET transistors produced by Toshiba. This device is suitable for use in applications requiring high-performance switching and amplifying, and it is the most commonly used MOSFET due to its versatility and performance. The main application fields of SPP15P10PGHKSA1 are given below.
Power Conversion:
This device finds use in fast, high-efficiency power conversion such as energy storage systems. For example, SPP15P10PGHKSA1 can be used for high-speed circuitry of inverters, motor drives and battery chargers. This is because the SPP15P10PGHKSA1 has a low on-state resistance, and its switching ability is improved due to its low input capacitance. This device also operates at low drain-source voltage, allowing it to be used in low-voltage systems.
Communications:
The SPP15P10PGHKSA1 is an ideal choice for RF applications. This is because the device has excellent gain, low input capacitance, low Miller capacitance and excellent thermal stability. As a result, this device can be used in cellular base-stations, routers and other communication infrastructure products that require high reliability.
Automotive:
The SPP15P10PGHKSA1 can also be used in automotive applications. This is because the device can withstand temperature variations and has rugged gate protection, allowing it to be used in harsh automotive environments. In addition, this device can also be used in power systems in cars, as it can handle high input current without any distortion.
Working Principle:
SPP15P10PGHKSA1 is a single gate transistor, which means that it has only one input that can be used to control the device. When the electricity passes through the gate, it creates an electric field in the device. This field then interacts with the N-type region, creating a channel in which electrons can flow from source to drain. By controlling the amount of electricity that passes through the gate, the device can be used to control the amount current flowing from source to drain.
The SPP15P10PGHKSA1 can be used in a variety of configurations, depending on the application. For example, the device can be used as a switch, to control the amount of current flowing through a circuit. Alternatively, it can also be used as an amplifier, to increase the signal strength of an input signal.
Conclusion:
SPP15P10PGHKSA1 is a versatile and reliable N-Channel MOSFET, which can be used in a variety of application fields. Its low on-state resistance and excellent switching performance make it an ideal choice for applications such as power conversion and communications. In addition, the device\'s rugged construction and temperature resistance make it suitable for automotive applications as well.
The specific data is subject to PDF, and the above content is for reference
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