SPP100N06S2L-05 Allicdata Electronics
Allicdata Part #:

SPP100N06S2L-05-ND

Manufacturer Part#:

SPP100N06S2L-05

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 100A TO-220
More Detail: N-Channel 55V 100A (Tc) 300W (Tc) Through Hole PG-...
DataSheet: SPP100N06S2L-05 datasheetSPP100N06S2L-05 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7530pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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SPP100N06S2L-05 is a type of insulated-gate field-effect transistor (IGFET or simply FET) comprising three terminals. It is also referred to as a Metal-Oxide-Semiconductor Field-Effect Transistor or MOSFET for short. An insulated gate is used for its control which allows for the current flow to be switched on and off when voltage is applied or removed from the gate terminal. SPP100N06S2L-05 is part of the Power MOSFET family and is mainly used in the power supply, motor drive, and communications circuits that require high power with low gate control power. This ensures that a low gate power is needed to switch the transistor on and off, eliminating the need for any external driver control circuitry.

The maximum drain current for SPP100N06S2L-05 is 100A and its drain to source breakdown voltage is 60V. It has an Rdson of 1.5mΩ at 25°C also referred to as on-resistance. This extremely low on-resistance allows this type of MOSFET to carry higher currents with minimal voltage drops. Compared to bipolar junction transistors, Power MOSFETs have higher power capabilities, faster switching speeds and are more efficient.

The SPP100N06S2L-05 can be used to build circuits providing power control to a variety of applications such as motor controllers, HVAC systems, digital appliances, power amplifiers, and other high-power control circuits. It works by having a input signal applied to the gate terminal to turn the transistor on or off. This will cause the output voltage to be either high or low, which can be used to control a variety of different circuits. Additionally, due to the low on-resistance it can be used to control relatively large power loads without having to worry about high voltage or current drops.

In summary, SPP100N06S2L-05 is a single MOSFET generally used in high-power control circuits such as motor controllers, HVAC systems, and digital appliances. Its insulated-gate field-effect configuration means that it can be used to control large power loads with minimal voltage and current drops. This makes it an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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