SPP16N50C3HKSA1

Vgs(th) (Max) @ Id:	3.9V @ 675µA
Package / Case:	TO-220-3
Supplier Device Package:	PG-TO220-3-1
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	160W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1600pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	66nC @ 10V
Series:	CoolMOS™
Rds On (Max) @ Id, Vgs:	280 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	16A (Tc)
Drain to Source Voltage (Vdss):	560V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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SPP16N50C3HKSA1 is a high-performance enhancement-mode field effect transistor. It is part of the P16 series of transistors. This component also comes with better performance and reliability when compared to other transistors.The SPP16N50C3HKSA1 component is designed to handle both low and high side switching, making it ideal for applications in majority of power switches, motor controllers, and low side switching applications. It has a Vdss rating of 500 volts, an ID of 16 amps, and an Rds(on) max of 0.025 Ohm. With these ratings, it can be used to deliver higher currents than other transistors.The SPP16N50C3HKSA1 component also boasts low gate charge resulting in lower switching losses as compared to other transistors. It also has a low thermal resistance and is able to dissipate heat evenly, making it ideal for thermal management applications. This component also has a wide range of packaging options, allowing for integration in a variety of applications.In terms of the SPP16N50C3HKSA1 component’s application fields, it can be used in various types of power converters as well as as a power switch or motor controllers. As it is an enhancement mode FET, it is well suited for these applications as it requires no gate current to turn it on. This means that it can effectively switch between higher instantaneous currents which eliminates power dissipation when not in use.The SPP16N50C3HKSA1 component can also used to drive solenoids and relays in low side switching applications. It is capable of driving lower currents than other transistors and its low gate charge means that switching losses are minimized. It is also ideal for PWM applications due to its ability to switch on and off rapidly without any variation in its characteristics.The working principle of the SPP16N50C3HKSA1 component is fairly simple. When a voltage is applied to its gate, the component\'s current carrying channel deposits itself between the source and drain terminals. This reduces the resistance between them, allowing for current to flow freely across the channel\'s entire length. As the voltage applied to the gate is increased, the channel’s resistance decreases and thus increases the current flowing through it.When the source and drain are shorted, no current can flow through the component as its channel is completely pinched off. This is referred to as the "off" state. If a voltage is applied to the gate, the transistor will enter its "on" state and current will be able to flow through it.The SPP16N50C3HKSA1 component is an excellent option for those looking for an FET that is designed to switch higher currents with low switching losses. With its wide range of packaging, it can easily be integrated into a variety of applications. Its wide operating voltage range, high voltage breakdown and low thermal resistance make it ideal for motor controllers, power switches and other applications that require reliable switching of high currents.

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