Allicdata Part #: | SPP11N60S5HKSA1-ND |
Manufacturer Part#: |
SPP11N60S5HKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 11A TO-220AB |
More Detail: | N-Channel 650V 11A (Tc) 125W (Tc) Through Hole PG-... |
DataSheet: | SPP11N60S5HKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5.5V @ 500µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO220-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1460pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 54nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The SPP11N60S5HKSA1 is a high current and low on-resistance small-signal N-channel power MOSFET transistor. It is part of STMicroelectronics’ STripFET Power MOSFET series and is suitable for applications such as lighting, industrial, home appliance, and automotive. It has an avalanche rating of 600 V, and a drain-source voltage rating of 600 V. With its excellent current handling capability, the SPP11N60S5HKSA1 is ideal for use in switching from low to medium loads.
Features
- Low on-resistance
- High thermally stable maximum operating junction temperature
- Optimized for high frequency operation
- Low inductance packaging to ensure very low switching losses
Applications
- Power supplies and converters
- DC-DC converters
- Inverters
- Server and telecom power systems
Working Principle
The SPP11N60S5HKSA1 is an N-channel power MOSFET transistor. It is made up of a source, a drain, and two gates, the gate being the controlling element. When a voltage is applied to the gate, it sets up a current between the source and the drain, allowing a current to flow. This is known as the JFET (Junction Field-Effect) effect. By altering the voltage applied to the gate, the resistance between the source and the drain can be adjusted for different current levels.
The SPP11N60S5HKSA1 is optimized for high frequency operation, allowing it to switch between low and medium loads quickly and efficiently. Its low on-resistance and high maximum operating junction temperature mean that it can withstand high temperatures and still perform optimally. Its low inductance packaging helps to ensure very low switching losses.
Conclusion
The SPP11N60S5HKSA1 transistor is a high current, low on-resistance N-channel power MOSFET. Its excellent current handling capability makes it ideal for switching from low to medium loads quickly and efficiently. Its optimized for high frequency operation, low on-resistance, and high maximum operating junction temperature allow it to withstand high temperatures and still perform. Its low inductance packaging helps toensure very low switching losses. It is suitable for applications such as lighting, industrial, home appliance, and automotive.
The specific data is subject to PDF, and the above content is for reference
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