Allicdata Part #: | SPP100N03S203-ND |
Manufacturer Part#: |
SPP100N03S203 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 100A TO-220AB |
More Detail: | N-Channel 30V 100A (Tc) 300W (Tc) Through Hole PG-... |
DataSheet: | SPP100N03S203 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO220-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7020pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 3.3 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The SPP100N03S203 is a logic level n-channel power MOSFET manufactured by NXP Semiconductors which is used in electronics projects like High-Side Switches, DC Motor Controls, Motor Drive Circuits as well as High Frequency DC/DC Converters. It has a drain-source voltage of 100 V, a gate charge of 8 nC, a gate threshold voltage of 3 V and a maximum continuous drain current of 16A. The SPP100N03S203 is designed with an animated structure that can help it to achieve a high level of dynamic performance.
Application Field
The SPP100N03S203 is most commonly used in power supply circuits and high-frequency switching circuits. It is also used in low-noise switches and other circuits where noise minimization is important. It operates as an efficient switch, allowing or blocking the flow of electrical current. Its low gate threshold voltages and wide drain-source voltage range make it ideal for use in various power switching applications. It is a relatively low cost solution to low power consumption and noise reduction when compared with other MOSFETs. Its ultra-low threshold voltage adds additional flexibility when used in switching applications.
Working Principle
This MOSFET operates by controlling the amount of charge that passes through its channel. The Gate is used to control the voltage and is connected to the source in order to form a reversed-biased diode. When a voltage is applied to the gate, electrons in the channel are attracted to the gate and begin to flow. This means that the MOSFET acts as a switch and allows electrons to flow between source and drain if there is a large enough voltage applied.
If the voltage on the Gate is below the threshold voltage (VGS(th)) then the MOSFET is turned off or in “off-state”. This means that electrons will not be able to flow between the source and drain. Since it operates at logic level voltages, it can be used in conjunction with digital logic integrated circuits to switch on and off at specific levels. This means that the SPP100N03S203 can be used in a wide range of applications.
The SPP100N03S203 is a robust MOSFET and can handle large amounts of current and can operate at high switching speeds due to its low gate capacitance and gate threshold voltage. It has a maximum gate capacitance of 8nC and a minimum gate threshold voltage of 3V. This makes it an ideal choice for many power switching circuits which require high speed power switching.
Due to its ultra-low gate threshold voltage and wide drain-source voltage range, the SPP100N03S203 can be used in a variety of power switching applications. It can be used in DC/DC converters, high-side switches, motor drives and DC motor control circuits. It offers an efficient and cost-effective way of providing low power consumption and noise reduction in various power switching applications.
The specific data is subject to PDF, and the above content is for reference
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