SPP100N08S2-07

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The SPP100N08S2-07 is a N channel enhancement MOSFET that operates in the ultra-low drain-source on resistance of 8mΩ and 170mΩ respectively. It is an excellent choice for a variety of applications due to its low gate charge, low gate input capacitance, fast switching speeds, and other features. This MOSFET is compatible for use in a wide range of temperature ranges and voltage ranges, making it suitable for various power management applications.

The SPP100N08S2-07 MOSFET is offered in a Surface Mounted Device (SMD) package. The small size of the package allows for efficient and cost-effective design, allowing the device to be incorporated into designs that require a high power efficiency. The ‘flood gate’ structure of the device ensures a low-profile and low-inductance form factor, and provides a powerful switching capability at a reduced component cost.

The SPP100N08S2-07 MOSFET is well-suited for applications involving power management, motor control, lighting control, and other high-current applications. Its very low drain-source on-resistance minimizes power dissipation and maximizes efficiency. The low gate input capacitance allows for improved response times and switching times. The device is also immune to electrostatic discharge damage, making it ideal for use in fields where such protection is necessary.

The SPP100N08S2-07 MOSFET\'s working principle involves the transfer of electrons through the n-channel. The substrate of the device acts as a barrier between the source and drain, reducing the energetic barrier needed to start conduction of the electrons. When a positive voltage is applied to the gate, a thin layer of positive charge is formed, increasing the width of the n-channel and allowing the electrons to travel between the source and the drain. This type of MOSFET has an intrinsic body effect that gives it a wide range of voltage thresholds.

The SPP100N08S2-07 MOSFET is an ideal choice for a variety of power management and motor control applications due to its low drain-source on-resistance, power dissipation and fast switching speeds. The device\'s low gate input capacitance further allows for improved response times and switching times, as well as protection from electrostatic discharge damage. It is also suitable for use in a wide range of temperature and voltage ranges, making it a convenient and reliable choice for today\'s power management needs.

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