Allicdata Part #: | SPP15P10PHXKSA1-ND |
Manufacturer Part#: |
SPP15P10PHXKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 100V 15A TO220-3 |
More Detail: | P-Channel 100V 15A (Tc) 128W (Tc) Through Hole PG-... |
DataSheet: | SPP15P10PHXKSA1 Datasheet/PDF |
Quantity: | 1000 |
Series: | SIPMOS® |
Packaging: | Tube |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 240 mOhm @ 10.6A, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 1.54mA |
Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1280pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 128W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO-220-3 |
Package / Case: | TO-220-3 |
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A SPP15P10PHXKSA1 is a power MOSFET manufactured by Samsung which belongs to the Single FETs subcategory. A FET or field effect transistor is an electronic device which is widely used for amplifying or switching signals in many circuits. The SPP15P10PHXKSA1 has an on-state resistance of 0.12 Ohms, output capability of 28 A, a drain-source breakdown voltage of 15V, and can handle a peak pulse current of 55 A. Its applications range from low-side/high-side switch, IGBT protection, and synchronous rectification in consumer and industrial applications like DC/DC converters, HVAC, Uninterrupted Power Supply (UPS), lighting, etc.
The SPP15P10PHXKSA1 MOSFET device is based on the working principle of field-effect transistors. This type of transistor features three terminals namely the gate, source, and drain. It works by using a gate electric field that controls the current flow between the source and the drain. The gate electric field is created by the voltage applied to the gate terminal. By adjusting the voltage applied to the gate, the current flow can be turned on or off.
For the SPP15P10PHXKSA1 MOSFET, a boundary layer is formed in the channel between the source and drain when voltage is applied to the gate terminal. This boundary layer is made of a thin layer of negatively charged electrons which is known as the "depletion layer." When the gate voltage applied is below the threshold voltage, the electrons are drawn away and the depletion layer expands. This makes the channel between the source and drain narrower, obstructing the current flow and effectively switching off the transistor.
On the other hand, when a higher voltage is applied to the gate terminal, the electrons are attracted towards the gate and the depletion layer is reduced. This effectively opens the channel between the source and drain enabling the current flow, thus switching on the device.
This is the working principle of the SPP15P10PHXKSA1 MOSFET device. Its wide applications range from low-side/high-side switch, IGBT protection, and synchronous rectification in consumer and industrial applications like DC/DC converters, HVAC, Uninterrupted Power Supply (UPS), lighting, etc.
The specific data is subject to PDF, and the above content is for reference
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