Allicdata Part #: | SQD50N04-09H-GE3CT-ND |
Manufacturer Part#: |
SQD50N04-09H-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 40V 50A TO252 |
More Detail: | N-Channel 40V 50A (Tc) 83W (Tc) Surface Mount TO-2... |
DataSheet: | SQD50N04-09H-GE3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 76nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4240pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 83W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252, (D-Pak) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The SQD50N04-09H-GE3 is a popular single P-channel enhancement mode MOSFET (metal oxide semiconductor field effect transistor), designed to give superior switching performance and tight on-off control. This makes it ideal for a range of applications, most notably in the control of power supplies and, to some extent, power management.
The principle of operation of the SQD50N04-09H-GE3 is based on the configuration of a MOSFET - specifically, a P-channel MOSFET. A MOSFET is a solid-state device comprising of an integrated gate structure that functions as a switching element. In other words, it acts as a gate between a source and a drain, which control the direction of current flow through the channel and hence the voltage on the gate.
As its name implies, the SQD50N04-09H-GE3 is a single P-channel enhancement-mode MOSFET. This means that when voltage is applied to the gate, it increases the conductivity of the channel, allowing current to pass through more easily. Conversely, when the voltage is removed, the conductivity of the channel is reduced, cutting off current flow through the channel. This makes it ideal for use in circuits where control of current flow is essential.
The SQD50N04-09H-GE3 is an exceptionally popular device due to its powerful features and performance. It has an extremely low on-resistance of just 0.07 ohm, and a corresponding low gate charge of 4.4nC. This makes it ideal for high-frequency switching applications, as it can charge and discharge quickly without wasting energy. It also boasts a high Input-Output Voltage Range of -20V to -20V, meaning it can be used in circuits where high voltages are present. Additionally, the SQD50N04-09H-GE3 has a high breakdown voltage of approximately 25V, as well as a Letch Voltage (Vth) of 4 volts.
The SQD50N04-09H-GE3 is usually used in power supplies, power management circuits and other switching applications. Due to its high input-output voltage range, it is often used in high voltage, high-frequency switching applications. It is also commonly used in motor control circuits, servo systems and other industrial applications. Additionally, it is suitable for automotive applications thanks to its high operating temperature range of -55°C to 150°C.
The SQD50N04-09H-GE3 is a popular choice for many applications due to its robust features and performance. Its low on-resistance, together with its high input-output voltage range and versatile operating temperature range, make it well suited to a variety of applications. In addition, its ability to charge and discharge quickly make it an attractive option for use in high-frequency switching applications. Finally, its high breakdown voltage makes it suitable for use in automotive applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SQD50N04-09H-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 50A TO252... |
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