Allicdata Part #: | SQD50N04-5M6L_GE3-ND |
Manufacturer Part#: |
SQD50N04-5M6L_GE3 |
Price: | $ 0.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 40V 50A TO252AA |
More Detail: | N-Channel 40V 50A (Tc) 71W (Tc) Surface Mount TO-2... |
DataSheet: | SQD50N04-5M6L_GE3 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.35298 |
Supplier Device Package: | TO-252AA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Series: | Automotive, AEC-Q101, TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5.6 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4000pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 71W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
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The SQD50N04-5M6L_GE3 is a power MOSFET available in a low on-resistance single package. It is a static power switch and is used in a wide variety of applications, ranging from motor control to power supply and battery management systems. This MOSFET is commonly used in automotive, industrial, communications, consumer, and medical applications. This article will explore the application field and working principle of the SQD50N04-5M6L_GE3.
Application Field: The MOSFET is most commonly used in automotive, industrial, consumer, communications, and medical applications. In the automotive field, it can be used for automotive fuel management, auxiliary power, and starter motor control. In industrial applications, it is used for high-current switching, motor control, and power conversion. It is also used in consumer applications for TVs, refrigerators, air conditioning systems, and other consumer electronics. In the communications field, it is used in cellular base stations, Wi-Fi modules, 4G/5G networks, and other communication systems. Lastly, the MOSFET is used in medical equipment, such as dialysis machines and ventilators.
Working Principle: As a static power switch, the SQD50N04-5M6L_GE3 works by using a metal-oxide-semiconductor field-effect transistor (MOSFET) to control the flow of current in a circuit. The MOSFET is a four-terminal device that consists of a source, a gate, a drain, and a body. The source and drain are connected to the power supply, and the gate is connected to a control voltage. When the gate voltage is applied to the MOSFET, the device acts as a switch, allowing current to flow between the source and the drain.
The advantage of using a MOSFET instead of other transistors is that it has a low on-resistance and a wide range of operating voltages. This makes it ideal for switching high currents with minimal power loss. The SQD50N04-5M6L_GE3 is specifically designed to deliver a low maximum on-resistance of 0.46 ohms and an avalanche energy of 4mJ. This MOSFET is also available in a single package and can handle currents up to 50A, making it ideal for a wide variety of applications.
The MOSFET can also be used in a variety of configurations depending on the application. It can be used as an inverter for switching between two states, as a voltage regulator to control the output voltage, or as a switch in motor control applications. The gate-source voltage of the MOSFET can also be controlled using a gate driver, which is a type of transistor paired with the MOSFET to control the gate voltage.
In conclusion, the SQD50N04-5M6L_GE3 is a power MOSFET used in automotive, industrial, consumer, communications, and medical applications. The MOSFET works by using a metal-oxide-semiconductor field-effect transistor to control the flow of current in a circuit. The advantage of using a MOSFET is that it has a low on-resistance and a wide range of operating voltages. This MOSFET can handle currents up to 50A and is available in a single package, making it ideal for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SQD50N04-09H-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 50A TO252... |
SQD50N06-09L_GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 50AN-Chan... |
SQD50P08-25L_GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CHAN 80V TO252P-... |
SQD50P04-09L_GE3 | Vishay Silic... | 1.02 $ | 1000 | MOSFET P-CH 40V 50AP-Chan... |
SQD50P04-13L_GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 50AP-Chan... |
SQD50P06-15L_GE3 | Vishay Silic... | -- | 4000 | MOSFET P-CH 60V 50A TO252... |
SQD50N05-11L_GE3 | Vishay Silic... | 0.55 $ | 1000 | MOSFET N-CH 50V 50A TO252... |
SQD50N10-8M9L_GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CHAN 100V TO252N... |
SQD50N04-5M6_T4GE3 | Vishay Silic... | 0.48 $ | 5000 | MOSFET N-CH 40V 50A TO252... |
SQD50N04-5M6L_GE3 | Vishay Silic... | 0.39 $ | 1000 | MOSFET N-CH 40V 50A TO252... |
SQD50N04-4M5L_GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 50A TO252... |
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SQD50P08-28_GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 80V 48A TO252... |
SQD50N04-5M6_GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 50A TO-25... |
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